Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

W. Wang; C. Hu; F. N. Li; S. Y. Li; Z. C. Liu; F. Wang; J. Fu; H. X. Wang

doi:10.1016/j.diamond.2016.01.019

Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

W. Wang
, C. Hu
, F. N. Li
, S. Y. Li
, Z. C. Liu
, F. Wang
, J. Fu
, H. X. Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρ_c) of 1.8 × 10^{- 6} Ω cm² evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρ_c firstly decreased to 4.93 × 10^-⁷ Ω cm² at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρ_c, among which HNO₃ vapor treated sample indicates a lower value of 5.32 × 10^-⁶ Ω cm².

Original language	English
Pages (from-to)	175-179
Number of pages	5
Journal	Diamond and Related Materials
Volume	63
DOIs	https://doi.org/10.1016/j.diamond.2016.01.019
State	Published - 1 Mar 2016

Keywords

Annealing
Ohmic contact
Palladium
Specific contact resistance
Surface treatment
XPS

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10.1016/j.diamond.2016.01.019

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@article{839e7b715d5e4de5bec7228fabd74d66,

title = "Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»",

abstract = "Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρc) of 1.8 × 10- 6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc firstly decreased to 4.93 × 10-7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10-6 Ω cm2.",

keywords = "Annealing, Ohmic contact, Palladium, Specific contact resistance, Surface treatment, XPS",

author = "W. Wang and C. Hu and Li, \{F. N.\} and Li, \{S. Y.\} and Liu, \{Z. C.\} and F. Wang and J. Fu and Wang, \{H. X.\}",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.diamond.2016.01.019",

language = "英语",

volume = "63",

pages = "175--179",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

AU - Wang, W.

AU - Hu, C.

AU - Li, F. N.

AU - Li, S. Y.

AU - Liu, Z. C.

AU - Wang, F.

AU - Fu, J.

AU - Wang, H. X.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρc) of 1.8 × 10- 6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc firstly decreased to 4.93 × 10-7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10-6 Ω cm2.

AB - Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρc) of 1.8 × 10- 6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc firstly decreased to 4.93 × 10-7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10-6 Ω cm2.

KW - Annealing

KW - Ohmic contact

KW - Palladium

KW - Specific contact resistance

KW - Surface treatment

KW - XPS

UR - https://www.scopus.com/pages/publications/84956861484

U2 - 10.1016/j.diamond.2016.01.019

DO - 10.1016/j.diamond.2016.01.019

M3 - 文章

AN - SCOPUS:84956861484

SN - 0925-9635

VL - 63

SP - 175

EP - 179

JO - Diamond and Related Materials

JF - Diamond and Related Materials

ER -

Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

Abstract

Keywords

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