TY - GEN
T1 - Reliability study of interconnect structures in IC packages
AU - Liu, Yong
AU - Liu, Yumin
AU - Irving, Scott
AU - Luk, Timwah
AU - Desbiens, Don
AU - Zhang, Zhen
AU - Suo, Zhigang
PY - 2006
Y1 - 2006
N2 - This paper will focus on reliability study of interconnect structure for two areas. The first area is reliability of interconnect structure in thermal cycling test. Major work includes the fundamental study of ratcheting for passivation cracking. By combination with the upper limit of stress intensity factor for a finite crack in the passivation and the ratcheting failure mechanism, the life of passivation in thermal cycling can be obtained in terms of the lower bound of critical number of cycles of the crack initiation. The passivation crack criterion is established to identify the failure modes: no cracking and delayed cracking. Another area is the reliability of bond pand over active (BPOA) with copper bond pads. Major work includes stress analysis of the dielectric layer under probing with different parameters such as the thickness of the copper bond pad, dielectric, metallization and the passivation under different probing loads. The elastic plastic model in copper bond pad and metal lines are introduced. Finally comparison of the results between copper bond pad and aluminum bond pad will be presented.
AB - This paper will focus on reliability study of interconnect structure for two areas. The first area is reliability of interconnect structure in thermal cycling test. Major work includes the fundamental study of ratcheting for passivation cracking. By combination with the upper limit of stress intensity factor for a finite crack in the passivation and the ratcheting failure mechanism, the life of passivation in thermal cycling can be obtained in terms of the lower bound of critical number of cycles of the crack initiation. The passivation crack criterion is established to identify the failure modes: no cracking and delayed cracking. Another area is the reliability of bond pand over active (BPOA) with copper bond pads. Major work includes stress analysis of the dielectric layer under probing with different parameters such as the thickness of the copper bond pad, dielectric, metallization and the passivation under different probing loads. The elastic plastic model in copper bond pad and metal lines are introduced. Finally comparison of the results between copper bond pad and aluminum bond pad will be presented.
UR - https://www.scopus.com/pages/publications/33847141960
U2 - 10.1109/ESIME.2006.1643948
DO - 10.1109/ESIME.2006.1643948
M3 - 会议稿件
AN - SCOPUS:33847141960
SN - 1424402751
SN - 9781424402755
T3 - 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006
BT - 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006
T2 - 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006
Y2 - 24 April 2006 through 26 April 2006
ER -