Abstract
Ferroelectric lead lanthanum zirconate titanate (PLZT) films with 8 mol% lanthanum and different Zr/Ti ratios (70/30, 65/35, 58/42, 52/48, 45/55, and 40/60) have been grown on platinized silicon substrates by chemical solution deposition. The effects of the Zr/Ti ratios on the dielectric and ferroelectric properties were investigated for high-power energy storage applications. These films exhibited relaxor behavior and slim polarization-electric field hysteresis loops, and the degree of phase transition diffuseness decreased with increasing Ti. The PLZT films with Zr/Ti=52/48 had a high spontaneous polarization of ≈51.2 μC/cm2, a low remanent polarization of ≈9.1 μC/cm2, and a low coercive electric field of ≈25.9 kV/cm, leading to a recoverable energy density of ≈30 J/cm3 and a charge-discharge efficiency of ≈78% at room temperature. The high energy density and high efficiency indicate that relaxor PLZT with La/Zr/Ti=8/52/48 is a promising candidate for high-power film capacitors.
| Original language | English |
|---|---|
| Pages (from-to) | 557-562 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 40 |
| Issue number | 1 PART A |
| DOIs | |
| State | Published - Jan 2014 |
| Externally published | Yes |
Keywords
- A. Sol-gel processes
- C. Ferroelectric properties
- D. PLZT
- E. Capacitors
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