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Relaxor behavior and energy storage performance of ferroelectric PLZT thin films with different Zr/Ti ratios

  • Zhongqiang Hu
  • , Beihai Ma
  • , Shanshan Liu
  • , Manoj Narayanan
  • , Uthamalingam Balachandran
  • Argonne National Laboratory

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

Ferroelectric lead lanthanum zirconate titanate (PLZT) films with 8 mol% lanthanum and different Zr/Ti ratios (70/30, 65/35, 58/42, 52/48, 45/55, and 40/60) have been grown on platinized silicon substrates by chemical solution deposition. The effects of the Zr/Ti ratios on the dielectric and ferroelectric properties were investigated for high-power energy storage applications. These films exhibited relaxor behavior and slim polarization-electric field hysteresis loops, and the degree of phase transition diffuseness decreased with increasing Ti. The PLZT films with Zr/Ti=52/48 had a high spontaneous polarization of ≈51.2 μC/cm2, a low remanent polarization of ≈9.1 μC/cm2, and a low coercive electric field of ≈25.9 kV/cm, leading to a recoverable energy density of ≈30 J/cm3 and a charge-discharge efficiency of ≈78% at room temperature. The high energy density and high efficiency indicate that relaxor PLZT with La/Zr/Ti=8/52/48 is a promising candidate for high-power film capacitors.

Original languageEnglish
Pages (from-to)557-562
Number of pages6
JournalCeramics International
Volume40
Issue number1 PART A
DOIs
StatePublished - Jan 2014
Externally publishedYes

Keywords

  • A. Sol-gel processes
  • C. Ferroelectric properties
  • D. PLZT
  • E. Capacitors

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