@inproceedings{a7a668c6b4504e138eb21fb667f7128e,
title = "Relaxation in GeSe Ovonic Threshold Switching Device",
abstract = "Relaxation in ovonic threshold switching (OTS) selector devices is an important issue that affects the stability of switching threshold voltage. Experimental evidence of the filamentary-type switching process and the Vth relaxation mechanism associated with defect charging and discharging in GexSe1-x OTS are discussed in this paper. The area independence of conduction current at the ON and OFF states, the Weibull distribution of time-to-switch-on and -off (t-on/t-off), the Vth relaxation and its dependence on time, bias and temperature have been investigated. This provides strong support for the switching mechanism that the modulation of a conductive filament by the defect delocalzation and localization is responsible for volatile switching and relaxation in GexSe1-x OTS.",
author = "W. Zhang and Z. Chai and P. Freitas and Zhang, \{J. F.\} and John Marsland",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 ; Conference date: 25-10-2022 Through 28-10-2022",
year = "2022",
doi = "10.1109/ICSICT55466.2022.9963303",
language = "英语",
series = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",
}