Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3

Ruth Muenstermann; Regina Dittmann; Krzysztof Szot; Shaobo Mi; Chun Lin Jia; Paul Meuffels; Rainer Waser

doi:10.1063/1.2959074

Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO₃

Ruth Muenstermann
, Regina Dittmann
, Krzysztof Szot
, Shaobo Mi
, Chun Lin Jia
, Paul Meuffels
, Rainer Waser

Jülich Research Centre

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO₃ thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an R_off to R_on ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy.

Original language	English
Article number	023110
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2959074
State	Published - 14 Jul 2008
Externally published	Yes

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title = "Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3",

abstract = "We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an Roff to Ron ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy.",

author = "Ruth Muenstermann and Regina Dittmann and Krzysztof Szot and Shaobo Mi and Jia, \{Chun Lin\} and Paul Meuffels and Rainer Waser",

year = "2008",

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T1 - Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3

AU - Muenstermann, Ruth

AU - Dittmann, Regina

AU - Szot, Krzysztof

AU - Mi, Shaobo

AU - Jia, Chun Lin

AU - Meuffels, Paul

AU - Waser, Rainer

PY - 2008/7/14

Y1 - 2008/7/14

N2 - We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an Roff to Ron ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy.

AB - We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an Roff to Ron ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy.

UR - https://www.scopus.com/pages/publications/47549085920

U2 - 10.1063/1.2959074

DO - 10.1063/1.2959074

M3 - 文章

AN - SCOPUS:47549085920

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023110

ER -

Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO₃

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