Reactive ion etching of sol-gel-derived BST thin film

Peng Shi; Xi Yao; Liangying Zhang

doi:10.1016/j.ceramint.2003.12.125

Reactive ion etching of sol-gel-derived BST thin film

Peng Shi
, Xi Yao
, Liangying Zhang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Perovskite (Ba,Sr)TiO₃ (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF₃/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.

Original language	English
Pages (from-to)	1513-1516
Number of pages	4
Journal	Ceramics International
Volume	30
Issue number	7
DOIs	https://doi.org/10.1016/j.ceramint.2003.12.125
State	Published - 2004
Event	3rd Asian Meeting on Electroceramics - Singapore, Singapore Duration: 7 Dec 2003 → 11 Dec 2003

Keywords

BST
CHF
RIE
Sol-gel
Thin Film

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10.1016/j.ceramint.2003.12.125

Cite this

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title = "Reactive ion etching of sol-gel-derived BST thin film",

abstract = "Perovskite (Ba,Sr)TiO3 (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF3/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.",

keywords = "BST, CHF, RIE, Sol-gel, Thin Film",

author = "Peng Shi and Xi Yao and Liangying Zhang",

year = "2004",

doi = "10.1016/j.ceramint.2003.12.125",

language = "英语",

volume = "30",

pages = "1513--1516",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "7",

note = "3rd Asian Meeting on Electroceramics ; Conference date: 07-12-2003 Through 11-12-2003",

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TY - JOUR

T1 - Reactive ion etching of sol-gel-derived BST thin film

AU - Shi, Peng

AU - Yao, Xi

AU - Zhang, Liangying

PY - 2004

Y1 - 2004

N2 - Perovskite (Ba,Sr)TiO3 (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF3/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.

AB - Perovskite (Ba,Sr)TiO3 (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF3/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.

KW - BST

KW - CHF

KW - RIE

KW - Sol-gel

KW - Thin Film

UR - https://www.scopus.com/pages/publications/4344640072

U2 - 10.1016/j.ceramint.2003.12.125

DO - 10.1016/j.ceramint.2003.12.125

M3 - 会议文章

AN - SCOPUS:4344640072

SN - 0272-8842

VL - 30

SP - 1513

EP - 1516

JO - Ceramics International

JF - Ceramics International

IS - 7

T2 - 3rd Asian Meeting on Electroceramics

Y2 - 7 December 2003 through 11 December 2003

ER -

Reactive ion etching of sol-gel-derived BST thin film

Abstract

Keywords

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