Rapid flame synthesis of multilayer graphene on SiO2/Si substrate

Hongzhong Liu; Shuya Zhu; Weitao Jiang

doi:10.1007/s10854-015-4092-y

Rapid flame synthesis of multilayer graphene on SiO₂/Si substrate

Hongzhong Liu
, Shuya Zhu
, Weitao Jiang

School of Mechanical Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report an approach to synthesize transfer-free multilayer graphene films rapidly on SiO₂/Si substrates by ethanol/H₂ flame in only 2 min. The ethanol/H₂ flame not only serves as a heat source and carbon source, but also provides protection atmosphere during the growth process. Raman spectra and TEM analysis show carbon atoms segregate to the Ni/SiO₂ interface are demonstrated to be multilayer graphene, while the carbon films form on top of the Ni layer are graphite layer. The graphene films synthesized on quartz substrate after Ni etching exhibits transmittance of up to 81 % at 550 nm and sheet resistance in the range from 1120 to 1540 Ω sq⁻¹.

Original language	English
Pages (from-to)	2795-2799
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	3
DOIs	https://doi.org/10.1007/s10854-015-4092-y
State	Published - 1 Mar 2016

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title = "Rapid flame synthesis of multilayer graphene on SiO2/Si substrate",

abstract = "We report an approach to synthesize transfer-free multilayer graphene films rapidly on SiO2/Si substrates by ethanol/H2 flame in only 2 min. The ethanol/H2 flame not only serves as a heat source and carbon source, but also provides protection atmosphere during the growth process. Raman spectra and TEM analysis show carbon atoms segregate to the Ni/SiO2 interface are demonstrated to be multilayer graphene, while the carbon films form on top of the Ni layer are graphite layer. The graphene films synthesized on quartz substrate after Ni etching exhibits transmittance of up to 81 \% at 550 nm and sheet resistance in the range from 1120 to 1540 Ω sq−1.",

author = "Hongzhong Liu and Shuya Zhu and Weitao Jiang",

note = "Publisher Copyright: {\textcopyright} 2015, Springer Science+Business Media New York.",

year = "2016",

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doi = "10.1007/s10854-015-4092-y",

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T1 - Rapid flame synthesis of multilayer graphene on SiO2/Si substrate

AU - Liu, Hongzhong

AU - Zhu, Shuya

AU - Jiang, Weitao

PY - 2016/3/1

Y1 - 2016/3/1

N2 - We report an approach to synthesize transfer-free multilayer graphene films rapidly on SiO2/Si substrates by ethanol/H2 flame in only 2 min. The ethanol/H2 flame not only serves as a heat source and carbon source, but also provides protection atmosphere during the growth process. Raman spectra and TEM analysis show carbon atoms segregate to the Ni/SiO2 interface are demonstrated to be multilayer graphene, while the carbon films form on top of the Ni layer are graphite layer. The graphene films synthesized on quartz substrate after Ni etching exhibits transmittance of up to 81 % at 550 nm and sheet resistance in the range from 1120 to 1540 Ω sq−1.

AB - We report an approach to synthesize transfer-free multilayer graphene films rapidly on SiO2/Si substrates by ethanol/H2 flame in only 2 min. The ethanol/H2 flame not only serves as a heat source and carbon source, but also provides protection atmosphere during the growth process. Raman spectra and TEM analysis show carbon atoms segregate to the Ni/SiO2 interface are demonstrated to be multilayer graphene, while the carbon films form on top of the Ni layer are graphite layer. The graphene films synthesized on quartz substrate after Ni etching exhibits transmittance of up to 81 % at 550 nm and sheet resistance in the range from 1120 to 1540 Ω sq−1.

UR - https://www.scopus.com/pages/publications/84957845742

U2 - 10.1007/s10854-015-4092-y

DO - 10.1007/s10854-015-4092-y

M3 - 文章

AN - SCOPUS:84957845742

SN - 0957-4522

VL - 27

SP - 2795

EP - 2799

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 3

ER -

Rapid flame synthesis of multilayer graphene on SiO₂/Si substrate

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