Radiation stability and in situ electrical stress healing of photodetection performance on α-In2Se3 based transistors

Pengfei Hou; Xinhao Wang; Hongxia Guo; Xiaoping Ouyang

doi:10.1109/ICREED52909.2021.9588791

Radiation stability and in situ electrical stress healing of photodetection performance on α-In₂Se₃ based transistors

Pengfei Hou
, Xinhao Wang
, Hongxia Guo
, Xiaoping Ouyang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, α-In2Se3 based transistors with channel widths of 20 μm have been irradiated with⁶⁰Co γ-rays. The radiation induced photoresponsivity degradation, radiation stability, and time annealing effect on α-In2Se3 based transistor have been investigated. Both the radiation induced domain evolution and the time annealing effect decrease the photoresponsivity of α-In2Se3 based transistor. Phonon modes, domain structure, and surface topography of the α-In2Se3 nanoflakes have been investigated in details for revealing the mechanism of the photoresponsivity degradation. The results show that the surface topography damage of α-In2Se3 may be the main factor affecting the radiation stability in the time annealing. It is very interesting that the in-situ electric stress can heal the photoresponsivity decreased by the time annealing effect, because the captured free carriers can be freed by the voltage sweeping. Considering that the α-In2Se3 based transistors can still be used as photodetectors after an irradiation of 1 Mrad(Si) and a time annealing of one year, αIn2Se3 is promising for photodetector in extreme environmental conditions.

Original language	English
Title of host publication	2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665441681
DOIs	https://doi.org/10.1109/ICREED52909.2021.9588791
State	Published - 2021
Externally published	Yes
Event	4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021 - Xi'an, China Duration: 26 May 2021 → 29 May 2021

Publication series

Name	2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

Conference

Conference	4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021
Country/Territory	China
City	Xi'an
Period	26/05/21 → 29/05/21

Keywords

Co γ-rays
Electrical stress
Photoelectricity
Radiation stability
α-In2Se3

Access to Document

10.1109/ICREED52909.2021.9588791

Cite this

Hou, P., Wang, X., Guo, H., & Ouyang, X. (2021). Radiation stability and in situ electrical stress healing of photodetection performance on α-In₂Se₃ based transistors. In 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021 (2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICREED52909.2021.9588791

Hou, Pengfei ; Wang, Xinhao ; Guo, Hongxia et al. / Radiation stability and in situ electrical stress healing of photodetection performance on α-In₂Se₃ based transistors. 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021).

@inproceedings{a345ea6f56f2402f9d367222d5f4aa70,

title = "Radiation stability and in situ electrical stress healing of photodetection performance on α-In2Se3 based transistors",

abstract = "In this work, α-In2Se3 based transistors with channel widths of 20 μm have been irradiated with60Co γ-rays. The radiation induced photoresponsivity degradation, radiation stability, and time annealing effect on α-In2Se3 based transistor have been investigated. Both the radiation induced domain evolution and the time annealing effect decrease the photoresponsivity of α-In2Se3 based transistor. Phonon modes, domain structure, and surface topography of the α-In2Se3 nanoflakes have been investigated in details for revealing the mechanism of the photoresponsivity degradation. The results show that the surface topography damage of α-In2Se3 may be the main factor affecting the radiation stability in the time annealing. It is very interesting that the in-situ electric stress can heal the photoresponsivity decreased by the time annealing effect, because the captured free carriers can be freed by the voltage sweeping. Considering that the α-In2Se3 based transistors can still be used as photodetectors after an irradiation of 1 Mrad(Si) and a time annealing of one year, αIn2Se3 is promising for photodetector in extreme environmental conditions.",

keywords = "Co γ-rays, Electrical stress, Photoelectricity, Radiation stability, α-In2Se3",

author = "Pengfei Hou and Xinhao Wang and Hongxia Guo and Xiaoping Ouyang",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021 ; Conference date: 26-05-2021 Through 29-05-2021",

year = "2021",

doi = "10.1109/ICREED52909.2021.9588791",

language = "英语",

series = "2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021",

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}

Hou, P, Wang, X, Guo, H & Ouyang, X 2021, Radiation stability and in situ electrical stress healing of photodetection performance on α-In₂Se₃ based transistors. in 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021. 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021, Institute of Electrical and Electronics Engineers Inc., 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021, Xi'an, China, 26/05/21. https://doi.org/10.1109/ICREED52909.2021.9588791

Radiation stability and in situ electrical stress healing of photodetection performance on α-In₂Se₃ based transistors. / Hou, Pengfei; Wang, Xinhao; Guo, Hongxia et al.
2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Radiation stability and in situ electrical stress healing of photodetection performance on α-In2Se3 based transistors

AU - Hou, Pengfei

AU - Wang, Xinhao

AU - Guo, Hongxia

AU - Ouyang, Xiaoping

PY - 2021

Y1 - 2021

N2 - In this work, α-In2Se3 based transistors with channel widths of 20 μm have been irradiated with60Co γ-rays. The radiation induced photoresponsivity degradation, radiation stability, and time annealing effect on α-In2Se3 based transistor have been investigated. Both the radiation induced domain evolution and the time annealing effect decrease the photoresponsivity of α-In2Se3 based transistor. Phonon modes, domain structure, and surface topography of the α-In2Se3 nanoflakes have been investigated in details for revealing the mechanism of the photoresponsivity degradation. The results show that the surface topography damage of α-In2Se3 may be the main factor affecting the radiation stability in the time annealing. It is very interesting that the in-situ electric stress can heal the photoresponsivity decreased by the time annealing effect, because the captured free carriers can be freed by the voltage sweeping. Considering that the α-In2Se3 based transistors can still be used as photodetectors after an irradiation of 1 Mrad(Si) and a time annealing of one year, αIn2Se3 is promising for photodetector in extreme environmental conditions.

AB - In this work, α-In2Se3 based transistors with channel widths of 20 μm have been irradiated with60Co γ-rays. The radiation induced photoresponsivity degradation, radiation stability, and time annealing effect on α-In2Se3 based transistor have been investigated. Both the radiation induced domain evolution and the time annealing effect decrease the photoresponsivity of α-In2Se3 based transistor. Phonon modes, domain structure, and surface topography of the α-In2Se3 nanoflakes have been investigated in details for revealing the mechanism of the photoresponsivity degradation. The results show that the surface topography damage of α-In2Se3 may be the main factor affecting the radiation stability in the time annealing. It is very interesting that the in-situ electric stress can heal the photoresponsivity decreased by the time annealing effect, because the captured free carriers can be freed by the voltage sweeping. Considering that the α-In2Se3 based transistors can still be used as photodetectors after an irradiation of 1 Mrad(Si) and a time annealing of one year, αIn2Se3 is promising for photodetector in extreme environmental conditions.

KW - Co γ-rays

KW - Electrical stress

KW - Photoelectricity

KW - Radiation stability

KW - α-In2Se3

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DO - 10.1109/ICREED52909.2021.9588791

M3 - 会议稿件

AN - SCOPUS:85126510004

T3 - 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

BT - 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

Y2 - 26 May 2021 through 29 May 2021

ER -

Hou P, Wang X, Guo H, Ouyang X. Radiation stability and in situ electrical stress healing of photodetection performance on α-In₂Se₃ based transistors. In 2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021). doi: 10.1109/ICREED52909.2021.9588791