TY - JOUR
T1 - Quantum Phase Transition in Germanene and Stanene Bilayer
T2 - From Normal Metal to Topological Insulator
AU - Huang, Chengxi
AU - Zhou, Jian
AU - Wu, Haiping
AU - Deng, Kaiming
AU - Jena, Puru
AU - Kan, Erjun
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/5/19
Y1 - 2016/5/19
N2 - Two-dimensional (2D) topological insulators (TIs) that exhibit quantum spin Hall effects are a new class of materials with conducting edge and insulating bulk. The conducting edge bands are spin-polarized, free of back scattering, and protected by time-reversal symmetry with potential for high-efficiency applications in spintronics. On the basis of first-principles calculations, we show that under external pressure recently synthesized stanene and germanene buckled bilayers can automatically convert into a new dynamically stable phase with flat honeycomb meshes. In contrast with the active surfaces of buckled bilayer of stanene or germanene, the above new phase is chemically inert. Furthermore, we demonstrate that these flat bilayers are 2D TIs with sizable topologically nontrivial band gaps of ∼0.1 eV, which makes them viable for room-temperature applications. Our results suggest some new design principles for searching stable large-gap 2D TIs.
AB - Two-dimensional (2D) topological insulators (TIs) that exhibit quantum spin Hall effects are a new class of materials with conducting edge and insulating bulk. The conducting edge bands are spin-polarized, free of back scattering, and protected by time-reversal symmetry with potential for high-efficiency applications in spintronics. On the basis of first-principles calculations, we show that under external pressure recently synthesized stanene and germanene buckled bilayers can automatically convert into a new dynamically stable phase with flat honeycomb meshes. In contrast with the active surfaces of buckled bilayer of stanene or germanene, the above new phase is chemically inert. Furthermore, we demonstrate that these flat bilayers are 2D TIs with sizable topologically nontrivial band gaps of ∼0.1 eV, which makes them viable for room-temperature applications. Our results suggest some new design principles for searching stable large-gap 2D TIs.
UR - https://www.scopus.com/pages/publications/84971343427
U2 - 10.1021/acs.jpclett.6b00651
DO - 10.1021/acs.jpclett.6b00651
M3 - 文章
AN - SCOPUS:84971343427
SN - 1948-7185
VL - 7
SP - 1919
EP - 1924
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 10
ER -