Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Z. Zhou; T. X. Nan; Y. Gao; X. Yang; S. Beguhn; M. Li; Y. Lu; J. L. Wang; M. Liu; K. Mahalingam; B. M. Howe; G. J. Brown; N. X. Sun

doi:10.1063/1.4839276

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Z. Zhou
, T. X. Nan
, Y. Gao
, X. Yang
, S. Beguhn
, M. Li
, Y. Lu
, J. L. Wang
, M. Liu
, K. Mahalingam
, B. M. Howe
, G. J. Brown
, N. X. Sun

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO₃ thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO₃ thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin films heterostructures constitute an important step toward real applications.

Original language	English
Article number	232906
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4839276
State	Published - 2 Dec 2013

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title = "Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures",

abstract = "Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO3 thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO3 thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin films heterostructures constitute an important step toward real applications.",

author = "Z. Zhou and Nan, \{T. X.\} and Y. Gao and X. Yang and S. Beguhn and M. Li and Y. Lu and Wang, \{J. L.\} and M. Liu and K. Mahalingam and Howe, \{B. M.\} and Brown, \{G. J.\} and Sun, \{N. X.\}",

year = "2013",

month = dec,

day = "2",

doi = "10.1063/1.4839276",

language = "英语",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

AU - Zhou, Z.

AU - Nan, T. X.

AU - Gao, Y.

AU - Yang, X.

AU - Beguhn, S.

AU - Li, M.

AU - Lu, Y.

AU - Wang, J. L.

AU - Liu, M.

AU - Mahalingam, K.

AU - Howe, B. M.

AU - Brown, G. J.

AU - Sun, N. X.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO3 thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO3 thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin films heterostructures constitute an important step toward real applications.

AB - Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO3 thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO3 thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin films heterostructures constitute an important step toward real applications.

UR - https://www.scopus.com/pages/publications/84889764279

U2 - 10.1063/1.4839276

DO - 10.1063/1.4839276

M3 - 文章

AN - SCOPUS:84889764279

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232906

ER -

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

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