PZT piezoelectric function structure on silicon substrate

In order to obtain a PZT piezoelectric function structure on the silicon substrate suitable for monolithic integrated chip, the research status quo of PZT piezoelectric thin (thick) films in the field of MEMS is analyzed, and then a new type of bi-cup PZT/Si film function structure is presented. This structure is optimized and designed with ANSYS finite element analysis software. The optimized structure parameters of the PZT and up-/sub-silicon-cup are D_PZT:D₁:D₂=0.75:1.1:1; and the resonant frequency of the first-order modality is 13.2 kHz. The bi-cup PZT piezoelectric thick film on the silicon substrate is fabricated with the oxidation, lithography, anisotropism etching and screen-printing processing, whose thickness is 80 μm, and has piezoelectric driving function. This PZT piezoelectric thick film driving structure with bi-cup on the silicone substrate has a better compatibility with MEMS technique, and is suitable to be a driving component for MEMS micro-actuator.