Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film

Hui Liu; Hang Zhang; Jinhai Si; Jingwen Zhang; Lihe Yan; Xing Wei; Xiaomei Wen; Xun Hou

doi:10.1016/j.optcom.2010.07.064

Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film

Hui Liu
, Hang Zhang
, Jinhai Si
, Jingwen Zhang
, Lihe Yan
, Xing Wei
, Xiaomei Wen
, Xun Hou

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Time resolved two-photon absorption induced electron-hole plasma (EHP) luminescence of Ga-doped ZnO thin film was measured by an ultrafast optical Kerr gate (OKG) in femtosecond time regime. Experimental results showed that the buildup time of the EHP luminescence was strongly dependent on the excitation fluence. The dependence of the buildup time of EHP on excitation fluence probably arose mainly from the relaxation of the hot carriers due to the carrier-carrier interaction, which increased with the increase of excitation fluence.

Original language	English
Pages (from-to)	5203-5206
Number of pages	4
Journal	Optics Communications
Volume	283
Issue number	24
DOIs	https://doi.org/10.1016/j.optcom.2010.07.064
State	Published - 15 Dec 2010

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10.1016/j.optcom.2010.07.064

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title = "Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film",

abstract = "Time resolved two-photon absorption induced electron-hole plasma (EHP) luminescence of Ga-doped ZnO thin film was measured by an ultrafast optical Kerr gate (OKG) in femtosecond time regime. Experimental results showed that the buildup time of the EHP luminescence was strongly dependent on the excitation fluence. The dependence of the buildup time of EHP on excitation fluence probably arose mainly from the relaxation of the hot carriers due to the carrier-carrier interaction, which increased with the increase of excitation fluence.",

author = "Hui Liu and Hang Zhang and Jinhai Si and Jingwen Zhang and Lihe Yan and Xing Wei and Xiaomei Wen and Xun Hou",

year = "2010",

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T1 - Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film

AU - Liu, Hui

AU - Zhang, Hang

AU - Si, Jinhai

AU - Zhang, Jingwen

AU - Yan, Lihe

AU - Wei, Xing

AU - Wen, Xiaomei

AU - Hou, Xun

PY - 2010/12/15

Y1 - 2010/12/15

N2 - Time resolved two-photon absorption induced electron-hole plasma (EHP) luminescence of Ga-doped ZnO thin film was measured by an ultrafast optical Kerr gate (OKG) in femtosecond time regime. Experimental results showed that the buildup time of the EHP luminescence was strongly dependent on the excitation fluence. The dependence of the buildup time of EHP on excitation fluence probably arose mainly from the relaxation of the hot carriers due to the carrier-carrier interaction, which increased with the increase of excitation fluence.

AB - Time resolved two-photon absorption induced electron-hole plasma (EHP) luminescence of Ga-doped ZnO thin film was measured by an ultrafast optical Kerr gate (OKG) in femtosecond time regime. Experimental results showed that the buildup time of the EHP luminescence was strongly dependent on the excitation fluence. The dependence of the buildup time of EHP on excitation fluence probably arose mainly from the relaxation of the hot carriers due to the carrier-carrier interaction, which increased with the increase of excitation fluence.

UR - https://www.scopus.com/pages/publications/78049314831

U2 - 10.1016/j.optcom.2010.07.064

DO - 10.1016/j.optcom.2010.07.064

M3 - 文章

AN - SCOPUS:78049314831

SN - 0030-4018

VL - 283

SP - 5203

EP - 5206

JO - Optics Communications

JF - Optics Communications

IS - 24

ER -

Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film

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