Pulsed laser deposited lead zirconate titanate thin films for micro actuators

Lulu Zhang; Masaaki Ichiki; Jiunnjye Tsaur; Zhan Jie Wang; Ryutaro Maeda

doi:10.1143/jjap.42.3986

Pulsed laser deposited lead zirconate titanate thin films for micro actuators

Lulu Zhang
, Masaaki Ichiki
, Jiunnjye Tsaur
, Zhan Jie Wang
, Ryutaro Maeda

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Lead zirconate titanate (Pb(Zr_xTi_1-x)O₃): PZT) films were deposited by pulsed laser ablation on Si/SiO₂/Ti/Pt substrates with one seed layer of sol-gel derived PZT at a deposition rate of 0.7 μm/h and substrate temperature of about 500°C. The fabricated films showed the perovskite PZT phase without pyrochlore phase. The dielectric constant was approximately 1580 when measured at 1 kHz. The values of the saturation polarization, remanent polarization and coercive field of the 0.8-μ.m-thick film were about 46.6μC/cm², 24.6 μC/cm ² and 36.4 kV/cm, respectively. Furthermore, a lower tensile stress (approximately 33 MPa) was obtained by wafer curvature measurements before and after PZT deposition. The piezoelectric coefficient d₃₁ was measured using a bimorph-beam and a value of 13 pC/N was obtained.

Original language	English
Pages (from-to)	3986-3990
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.42.3986
State	Published - Jun 2003
Externally published	Yes

Keywords

Ferroelectric and dielectric properties
Lead zirconate titanate (PZT)
Piezoelectric coefficient d
Pulsed laser ablation
Sol-gel technique
Stresses

Access to Document

10.1143/jjap.42.3986

Cite this

@article{19893a03e25c42cdaa1b89e970dcab72,

title = "Pulsed laser deposited lead zirconate titanate thin films for micro actuators",

abstract = "Lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) films were deposited by pulsed laser ablation on Si/SiO2/Ti/Pt substrates with one seed layer of sol-gel derived PZT at a deposition rate of 0.7 μm/h and substrate temperature of about 500°C. The fabricated films showed the perovskite PZT phase without pyrochlore phase. The dielectric constant was approximately 1580 when measured at 1 kHz. The values of the saturation polarization, remanent polarization and coercive field of the 0.8-μ.m-thick film were about 46.6μC/cm2, 24.6 μC/cm 2 and 36.4 kV/cm, respectively. Furthermore, a lower tensile stress (approximately 33 MPa) was obtained by wafer curvature measurements before and after PZT deposition. The piezoelectric coefficient d31 was measured using a bimorph-beam and a value of 13 pC/N was obtained.",

keywords = "Ferroelectric and dielectric properties, Lead zirconate titanate (PZT), Piezoelectric coefficient d, Pulsed laser ablation, Sol-gel technique, Stresses",

author = "Lulu Zhang and Masaaki Ichiki and Jiunnjye Tsaur and Wang, \{Zhan Jie\} and Ryutaro Maeda",

year = "2003",

month = jun,

doi = "10.1143/jjap.42.3986",

language = "英语",

volume = "42",

pages = "3986--3990",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "6 B",

}

TY - JOUR

T1 - Pulsed laser deposited lead zirconate titanate thin films for micro actuators

AU - Zhang, Lulu

AU - Ichiki, Masaaki

AU - Tsaur, Jiunnjye

AU - Wang, Zhan Jie

AU - Maeda, Ryutaro

PY - 2003/6

Y1 - 2003/6

N2 - Lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) films were deposited by pulsed laser ablation on Si/SiO2/Ti/Pt substrates with one seed layer of sol-gel derived PZT at a deposition rate of 0.7 μm/h and substrate temperature of about 500°C. The fabricated films showed the perovskite PZT phase without pyrochlore phase. The dielectric constant was approximately 1580 when measured at 1 kHz. The values of the saturation polarization, remanent polarization and coercive field of the 0.8-μ.m-thick film were about 46.6μC/cm2, 24.6 μC/cm 2 and 36.4 kV/cm, respectively. Furthermore, a lower tensile stress (approximately 33 MPa) was obtained by wafer curvature measurements before and after PZT deposition. The piezoelectric coefficient d31 was measured using a bimorph-beam and a value of 13 pC/N was obtained.

AB - Lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) films were deposited by pulsed laser ablation on Si/SiO2/Ti/Pt substrates with one seed layer of sol-gel derived PZT at a deposition rate of 0.7 μm/h and substrate temperature of about 500°C. The fabricated films showed the perovskite PZT phase without pyrochlore phase. The dielectric constant was approximately 1580 when measured at 1 kHz. The values of the saturation polarization, remanent polarization and coercive field of the 0.8-μ.m-thick film were about 46.6μC/cm2, 24.6 μC/cm 2 and 36.4 kV/cm, respectively. Furthermore, a lower tensile stress (approximately 33 MPa) was obtained by wafer curvature measurements before and after PZT deposition. The piezoelectric coefficient d31 was measured using a bimorph-beam and a value of 13 pC/N was obtained.

KW - Ferroelectric and dielectric properties

KW - Lead zirconate titanate (PZT)

KW - Piezoelectric coefficient d

KW - Pulsed laser ablation

KW - Sol-gel technique

KW - Stresses

UR - https://www.scopus.com/pages/publications/0042362215

U2 - 10.1143/jjap.42.3986

DO - 10.1143/jjap.42.3986

M3 - 文章

AN - SCOPUS:0042362215

SN - 0021-4922

VL - 42

SP - 3986

EP - 3990

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 B

ER -

Pulsed laser deposited lead zirconate titanate thin films for micro actuators

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this