Properties of plt thin films by thermal decomposition of metalloorganic compounds

Wei Ren; Yun Liu; Jihui Qiu; Liangying Zhang; Xi Yao

doi:10.1080/00150199408017620

Properties of plt thin films by thermal decomposition of metalloorganic compounds

Wei Ren
, Yun Liu
, Jihui Qiu
, Liangying Zhang
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61nC/cm2 has been achieved in PLT5 films, while Ec is 164KV/cm, which is much higher than that of bulk materials.

Original language	English
Pages (from-to)	201-206
Number of pages	6
Journal	Ferroelectrics
Volume	152
Issue number	1
DOIs	https://doi.org/10.1080/00150199408017620
State	Published - Feb 1994

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title = "Properties of plt thin films by thermal decomposition of metalloorganic compounds",

abstract = "The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol\% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61nC/cm2 has been achieved in PLT5 films, while Ec is 164KV/cm, which is much higher than that of bulk materials.",

author = "Wei Ren and Yun Liu and Jihui Qiu and Liangying Zhang and Xi Yao",

year = "1994",

month = feb,

doi = "10.1080/00150199408017620",

language = "英语",

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journal = "Ferroelectrics",

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T1 - Properties of plt thin films by thermal decomposition of metalloorganic compounds

AU - Ren, Wei

AU - Liu, Yun

AU - Qiu, Jihui

AU - Zhang, Liangying

AU - Yao, Xi

PY - 1994/2

Y1 - 1994/2

N2 - The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61nC/cm2 has been achieved in PLT5 films, while Ec is 164KV/cm, which is much higher than that of bulk materials.

AB - The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61nC/cm2 has been achieved in PLT5 films, while Ec is 164KV/cm, which is much higher than that of bulk materials.

UR - https://www.scopus.com/pages/publications/0028056424

U2 - 10.1080/00150199408017620

DO - 10.1080/00150199408017620

M3 - 文章

AN - SCOPUS:0028056424

SN - 0015-0193

VL - 152

SP - 201

EP - 206

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Properties of plt thin films by thermal decomposition of metalloorganic compounds

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