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Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

  • I. Vrejoiu
  • , C. Himcinschi
  • , L. Jin
  • , C. L. Jia
  • , N. Raab
  • , J. Engelmayer
  • , R. Waser
  • , R. Dittmann
  • , P. H.M. Van Loosdrecht

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.

Original languageEnglish
Article number046103
JournalAPL Materials
Volume4
Issue number4
DOIs
StatePublished - Apr 2016
Externally publishedYes

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