Abstract
An experiment for generation performance of semiconductor thermoelectric module was carried out, and some useful results were obtained. One is the relationship between generation performance and hot-side temperature, when cold-side temperature is kept constant. The other is the relationship between generation performance and cold-side temperature, when hot-side temperature is kept constant. While semiconductor thermoelectric module is used as power supply, inner-resistance which is changed with temperature has great influence on its performance. A simplified calculation based on theoretical method was conducted and the calculating data agree well with the experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 148-152 |
| Number of pages | 5 |
| Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
| Volume | 22 |
| Issue number | 2 |
| State | Published - Apr 2001 |
Keywords
- Cold-side temperature
- Generation performance
- Hot-side temperature
- Inner-resistance
- Semiconductor thermoelectric module
