Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution

Guojun Yan; Guangde Chen; Bailing Jiang; Yelong Wu

doi:10.1016/j.matlet.2009.07.033

Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution

Guojun Yan
, Guangde Chen
, Bailing Jiang
, Yelong Wu

School of Physics

Xi'an University of Technology
Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Porous AlN particles were prepared from an aluminum-magnesium melt solution. These samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and N₂-adsorption isotherms. The results show that there are many pore formations in every AlN particle, and the wall thickness of the pores is about 10 nm, the diameter of the pores is hundreds of nanometers and the Brunauer-Emmett-Teller (BET) surface area of the samples is 65.183 m²/g.

Original language	English
Pages (from-to)	2205-2207
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	26
DOIs	https://doi.org/10.1016/j.matlet.2009.07.033
State	Published - 31 Oct 2009

Keywords

Electronic materials
Nanomaterials
Semiconductors

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10.1016/j.matlet.2009.07.033

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title = "Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution",

abstract = "Porous AlN particles were prepared from an aluminum-magnesium melt solution. These samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and N2-adsorption isotherms. The results show that there are many pore formations in every AlN particle, and the wall thickness of the pores is about 10 nm, the diameter of the pores is hundreds of nanometers and the Brunauer-Emmett-Teller (BET) surface area of the samples is 65.183 m2/g.",

keywords = "Electronic materials, Nanomaterials, Semiconductors",

author = "Guojun Yan and Guangde Chen and Bailing Jiang and Yelong Wu",

year = "2009",

month = oct,

day = "31",

doi = "10.1016/j.matlet.2009.07.033",

language = "英语",

volume = "63",

pages = "2205--2207",

journal = "Materials Letters",

issn = "0167-577X",

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TY - JOUR

T1 - Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution

AU - Yan, Guojun

AU - Chen, Guangde

AU - Jiang, Bailing

AU - Wu, Yelong

PY - 2009/10/31

Y1 - 2009/10/31

N2 - Porous AlN particles were prepared from an aluminum-magnesium melt solution. These samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and N2-adsorption isotherms. The results show that there are many pore formations in every AlN particle, and the wall thickness of the pores is about 10 nm, the diameter of the pores is hundreds of nanometers and the Brunauer-Emmett-Teller (BET) surface area of the samples is 65.183 m2/g.

AB - Porous AlN particles were prepared from an aluminum-magnesium melt solution. These samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and N2-adsorption isotherms. The results show that there are many pore formations in every AlN particle, and the wall thickness of the pores is about 10 nm, the diameter of the pores is hundreds of nanometers and the Brunauer-Emmett-Teller (BET) surface area of the samples is 65.183 m2/g.

KW - Electronic materials

KW - Nanomaterials

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/69249216382

U2 - 10.1016/j.matlet.2009.07.033

DO - 10.1016/j.matlet.2009.07.033

M3 - 文章

AN - SCOPUS:69249216382

SN - 0167-577X

VL - 63

SP - 2205

EP - 2207

JO - Materials Letters

JF - Materials Letters

IS - 26

ER -

Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution

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Keywords

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