Abstract
Porous AlN particles were prepared from an aluminum-magnesium melt solution. These samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and N2-adsorption isotherms. The results show that there are many pore formations in every AlN particle, and the wall thickness of the pores is about 10 nm, the diameter of the pores is hundreds of nanometers and the Brunauer-Emmett-Teller (BET) surface area of the samples is 65.183 m2/g.
| Original language | English |
|---|---|
| Pages (from-to) | 2205-2207 |
| Number of pages | 3 |
| Journal | Materials Letters |
| Volume | 63 |
| Issue number | 26 |
| DOIs | |
| State | Published - 31 Oct 2009 |
Keywords
- Electronic materials
- Nanomaterials
- Semiconductors