Preparation of plt thin films by thermal decomposition of metalloorganic compounds

Ferroelectric PLT thin films were prepared by metalloorganic compound decomposition(MOD) process. Uniform, pin hole free and crack free PLT thin films with thicknesses ranging from 0.6jam to l|im were prepared by repeating spinning-coating of precursor solutions and annealing for 8 times. The chemical compositions analyzed by electron probe were consistent with stoichiometry. The XRD analysis shows that pure perovskite phase and a-axial preferential orientation can be obtained in films with La content lower than 15mol% when fired over 500°C using silicon as substrate. Preferential orientation is also affected by the thickness of the film and its La content.