Preparation of MoSe₂ nano-islands array embedded in a TiO₂ matrix for photo-regulated resistive switching memory

The electrically driven resistance change of a material, called memristive switching, is a fascinating phenomenon in the development of next generation nonvolatile memory alternatives to flash technology. Herein, the composite of MoSe₂ nano-islands array inserted into TiO₂ matrix grown on fluorine-doped tin oxide (FTO) substrate was prepared by anodic aluminum oxide (AAO) template assisted radio frequency magnetron sputtering. Further, a photo-controlled resistive switching memory device with Ag/[MoSe₂/TiO₂]/FTO structure is demonstrated. The device presents stable resistive switching memory behaviors in dark and under illumination respectively. Finally, the mechanism for the photo-controlled memory behaviors is discussed in detail. This implication provides a foundation for exploring the multifunctional composites and their applications in photo-controlled nonvolatile memory devices.