Preparation of MAPbX₃ perovskite thin film materials using in-situ doping atomized deposition methods

Thin films of organic halogenated perovskite MAPbX₃ (X = Cl, Br, I or mixed, CH₃NH₃ = MA) display exceptional optical and electronic properties, rendering them highly promising materials for next-generation optoelectronics. However, achieving a large, thin, and smooth film poses a considerable challenge. Compared with the traditional spraying method, the atomized deposition method is able to break down the precursor solution molecules in the atomization system, and this method produces films with thinner thicknesses(800–1000 nm), smoother surfaces, high light transmittance and low surface roughness. By investigating the deposition time, annealing temperature, and film stability associated with the atomized deposition technique, we determined the optimal process parameters for producing nanometer-thick perovskite films. Specifically, we set the precursor solution concentration to 0.1 mmol/L, the deposition time to 450 s, added PVDF (polyvinylidene fluoride) colloid at a concentration of 3 wt%, and maintained an annealing temperature of 80 °C for 20 min. Ultimately, perovskite films with tunable bandgap were prepared for anti-counterfeit marking applications. This method of preparing perovskite films represents a significant advancement towards their commercial utilization in the realm of optoelectronic materials.