Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation

Zhan Jie Wang; Isao Karibe; Ryutaro Maeda; Hiroyuki Kokawa

doi:10.1111/j.1151-2916.2002.tb00592.x

Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation

Zhan Jie Wang
, Isao Karibe
, Ryutaro Maeda
, Hiroyuki Kokawa

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Thin films of Pb(Zr_0.52Ti_0.48)O₃ (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO₂/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO₂/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.

Original language	English
Pages (from-to)	3108-3110
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	85
Issue number	12
DOIs	https://doi.org/10.1111/j.1151-2916.2002.tb00592.x
State	Published - Dec 2002
Externally published	Yes

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title = "Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation",

abstract = "Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.",

author = "Wang, \{Zhan Jie\} and Isao Karibe and Ryutaro Maeda and Hiroyuki Kokawa",

year = "2002",

month = dec,

doi = "10.1111/j.1151-2916.2002.tb00592.x",

language = "英语",

volume = "85",

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journal = "Journal of the American Ceramic Society",

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TY - JOUR

T1 - Preparation of lead zirconate titanate thin films derived by hybrid processing

T2 - Sol-gel method and laser ablation

AU - Wang, Zhan Jie

AU - Karibe, Isao

AU - Maeda, Ryutaro

AU - Kokawa, Hiroyuki

PY - 2002/12

Y1 - 2002/12

N2 - Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.

AB - Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.

UR - https://www.scopus.com/pages/publications/0036967995

U2 - 10.1111/j.1151-2916.2002.tb00592.x

DO - 10.1111/j.1151-2916.2002.tb00592.x

M3 - 文章

AN - SCOPUS:0036967995

SN - 0002-7820

VL - 85

SP - 3108

EP - 3110

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 12

ER -

Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation

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