Preparation and properties of (La, Mn) codoped PZT thin films by a MOD method

Peng Shi; Wei Ren; Xiaoqing Wu; Linhong Cao; Xi Yao

doi:10.1080/10584580601085297

Preparation and properties of (La, Mn) codoped PZT thin films by a MOD method

Peng Shi
, Wei Ren
, Xiaoqing Wu
, Linhong Cao
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Polycrystalline and crack-free Pb_0.9La_0.04(Zr _0.52Ti_0.48)_0.96Mn_0.04O₃ (PLMZT) thin films were prepared on LNO/Pt/SiO₂/Si and fused silica substrates by a MOD method. PLMZT thin films possess a well-crystallized perovskite structure with (110) preferential orientation. Dielectric constant at 100 kHz is found to be 550. Coercive field and remanent polarization of PLMZT films are 145 kV/cm and 15 μC/cm² respectively. Leakage current density of Au/PLMZT/LNO/Pt capacitor is 100-200 μA/cm² at an applied electrical field of 300 kV/cm. The leakage current behavior is electrode-limited in nature. Remanent polarization and saturated polarization decrease about 18% after 10⁸ cycles at 10 V and 100 Hz. The optical transmittance measurements indicate that the absorption edge of PLMZT films is about 285 nm. The band gap energy of PLMZT polycrystalline thin films is 3.82 eV.

Original language	English
Pages (from-to)	91-98
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	84
Issue number	1
DOIs	https://doi.org/10.1080/10584580601085297
State	Published - 2006

Keywords

Electrical properties
LaNiOj
Mn and La dopants
Optical transmittance
PZT films

Access to Document

10.1080/10584580601085297

Cite this

@article{df02b57192144f98bd71384867aa5f13,

title = "Preparation and properties of (La, Mn) codoped PZT thin films by a MOD method",

abstract = "Polycrystalline and crack-free Pb0.9La0.04(Zr 0.52Ti0.48)0.96Mn0.04O3 (PLMZT) thin films were prepared on LNO/Pt/SiO2/Si and fused silica substrates by a MOD method. PLMZT thin films possess a well-crystallized perovskite structure with (110) preferential orientation. Dielectric constant at 100 kHz is found to be 550. Coercive field and remanent polarization of PLMZT films are 145 kV/cm and 15 μC/cm2 respectively. Leakage current density of Au/PLMZT/LNO/Pt capacitor is 100-200 μA/cm2 at an applied electrical field of 300 kV/cm. The leakage current behavior is electrode-limited in nature. Remanent polarization and saturated polarization decrease about 18\% after 108 cycles at 10 V and 100 Hz. The optical transmittance measurements indicate that the absorption edge of PLMZT films is about 285 nm. The band gap energy of PLMZT polycrystalline thin films is 3.82 eV.",

keywords = "Electrical properties, LaNiOj, Mn and La dopants, Optical transmittance, PZT films",

author = "Peng Shi and Wei Ren and Xiaoqing Wu and Linhong Cao and Xi Yao",

year = "2006",

doi = "10.1080/10584580601085297",

language = "英语",

volume = "84",

pages = "91--98",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Preparation and properties of (La, Mn) codoped PZT thin films by a MOD method

AU - Shi, Peng

AU - Ren, Wei

AU - Wu, Xiaoqing

AU - Cao, Linhong

AU - Yao, Xi

PY - 2006

Y1 - 2006

N2 - Polycrystalline and crack-free Pb0.9La0.04(Zr 0.52Ti0.48)0.96Mn0.04O3 (PLMZT) thin films were prepared on LNO/Pt/SiO2/Si and fused silica substrates by a MOD method. PLMZT thin films possess a well-crystallized perovskite structure with (110) preferential orientation. Dielectric constant at 100 kHz is found to be 550. Coercive field and remanent polarization of PLMZT films are 145 kV/cm and 15 μC/cm2 respectively. Leakage current density of Au/PLMZT/LNO/Pt capacitor is 100-200 μA/cm2 at an applied electrical field of 300 kV/cm. The leakage current behavior is electrode-limited in nature. Remanent polarization and saturated polarization decrease about 18% after 108 cycles at 10 V and 100 Hz. The optical transmittance measurements indicate that the absorption edge of PLMZT films is about 285 nm. The band gap energy of PLMZT polycrystalline thin films is 3.82 eV.

AB - Polycrystalline and crack-free Pb0.9La0.04(Zr 0.52Ti0.48)0.96Mn0.04O3 (PLMZT) thin films were prepared on LNO/Pt/SiO2/Si and fused silica substrates by a MOD method. PLMZT thin films possess a well-crystallized perovskite structure with (110) preferential orientation. Dielectric constant at 100 kHz is found to be 550. Coercive field and remanent polarization of PLMZT films are 145 kV/cm and 15 μC/cm2 respectively. Leakage current density of Au/PLMZT/LNO/Pt capacitor is 100-200 μA/cm2 at an applied electrical field of 300 kV/cm. The leakage current behavior is electrode-limited in nature. Remanent polarization and saturated polarization decrease about 18% after 108 cycles at 10 V and 100 Hz. The optical transmittance measurements indicate that the absorption edge of PLMZT films is about 285 nm. The band gap energy of PLMZT polycrystalline thin films is 3.82 eV.

KW - Electrical properties

KW - LaNiOj

KW - Mn and La dopants

KW - Optical transmittance

KW - PZT films

UR - https://www.scopus.com/pages/publications/71149084616

U2 - 10.1080/10584580601085297

DO - 10.1080/10584580601085297

M3 - 文章

AN - SCOPUS:71149084616

SN - 1058-4587

VL - 84

SP - 91

EP - 98

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Preparation and properties of (La, Mn) codoped PZT thin films by a MOD method

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this