Preparation and dielectric properties of Bi_0.05Sr _0.925TiO₃ thin films

Dense and crack-free Bi0.05Sr0.925TiO3 (BiST) thin films have been prepared by a pulsed laser deposition (PLD) method. The targets were synthesized using a conventional solid state reaction processing and fired at 1320°C for 5 hrs. BiST thin films were deposited at various substrate temperatures from 600°C to 780°C with the fixed power energy of 250 mJ and oxygen partial pressure of 10 Pa. X-ray diffraction results reveal that the thin films are cubic perovskite structure and random orientation. The dielectric properties of BiST thin films as a function of frequency were measured. The influence of the growth temperature on the structures and electrical properties has been discussed.