Preparation and characteristics of the wide gap semiconductor Mg 0.18Zn0.82O thin film by L-MBE

Yong Ning He; Jing Wen Zhang; Xiao Dong Yang; Qing An Xu; Xing Hui Liu; Chang Chun Zhu; Xun Hou

doi:10.1016/j.mejo.2004.11.005

Preparation and characteristics of the wide gap semiconductor Mg _0.18Zn_0.82O thin film by L-MBE

Yong Ning He
, Jing Wen Zhang
, Xiao Dong Yang
, Qing An Xu
, Xing Hui Liu
, Chang Chun Zhu
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The high purity ZnO ceramic target and the (MgO)_0.1(ZnO) _0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary Mg_xZn_1-xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the Mg_xZn_1-xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the Mg_xZn_1-xO alloy film. The Mg content x in the Mg _xZn_1-xO alloy film was determined to be 0.18.

Original language	English
Pages (from-to)	125-128
Number of pages	4
Journal	Microelectronics Journal
Volume	36
Issue number	2
DOIs	https://doi.org/10.1016/j.mejo.2004.11.005
State	Published - Feb 2005

Keywords

Ceramic target
L-MBE
MgZnO alloy thin film
ZnO thin film

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10.1016/j.mejo.2004.11.005

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title = "Preparation and characteristics of the wide gap semiconductor Mg 0.18Zn0.82O thin film by L-MBE",

abstract = "The high purity ZnO ceramic target and the (MgO)0.1(ZnO) 0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1-xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1-xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the MgxZn1-xO alloy film. The Mg content x in the Mg xZn1-xO alloy film was determined to be 0.18.",

keywords = "Ceramic target, L-MBE, MgZnO alloy thin film, ZnO thin film",

author = "He, \{Yong Ning\} and Zhang, \{Jing Wen\} and Yang, \{Xiao Dong\} and Xu, \{Qing An\} and Liu, \{Xing Hui\} and Zhu, \{Chang Chun\} and Xun Hou",

year = "2005",

month = feb,

doi = "10.1016/j.mejo.2004.11.005",

language = "英语",

volume = "36",

pages = "125--128",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - Preparation and characteristics of the wide gap semiconductor Mg 0.18Zn0.82O thin film by L-MBE

AU - He, Yong Ning

AU - Zhang, Jing Wen

AU - Yang, Xiao Dong

AU - Xu, Qing An

AU - Liu, Xing Hui

AU - Zhu, Chang Chun

AU - Hou, Xun

PY - 2005/2

Y1 - 2005/2

N2 - The high purity ZnO ceramic target and the (MgO)0.1(ZnO) 0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1-xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1-xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the MgxZn1-xO alloy film. The Mg content x in the Mg xZn1-xO alloy film was determined to be 0.18.

AB - The high purity ZnO ceramic target and the (MgO)0.1(ZnO) 0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1-xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1-xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the MgxZn1-xO alloy film. The Mg content x in the Mg xZn1-xO alloy film was determined to be 0.18.

KW - Ceramic target

KW - L-MBE

KW - MgZnO alloy thin film

KW - ZnO thin film

UR - https://www.scopus.com/pages/publications/12444278277

U2 - 10.1016/j.mejo.2004.11.005

DO - 10.1016/j.mejo.2004.11.005

M3 - 文章

AN - SCOPUS:12444278277

SN - 0026-2692

VL - 36

SP - 125

EP - 128

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 2

ER -

Preparation and characteristics of the wide gap semiconductor Mg _0.18Zn_0.82O thin film by L-MBE

Abstract

Keywords

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