PO2 dependant resistance switch effect in highly epitaxial (LaBa) Co2 O5+δ thin films

Jian Liu; Gregory Collins; Ming Liu; C. L. Chen; Jiechao Jiang; Efsftathios I. Meletis; Qingyu Zhang; Chuang Dong

doi:10.1063/1.3484964

PO₂ dependant resistance switch effect in highly epitaxial (LaBa) Co₂ O₅+δ thin films

Jian Liu
, Gregory Collins
, Ming Liu
, C. L. Chen
, Jiechao Jiang
, Efsftathios I. Meletis
, Qingyu Zhang
, Chuang Dong

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Giant resistance switching behavior in mixed conductive (LaBa) Co ₂ O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H₂ /96% N₂ to oxygen at temperature range of 400-780°C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa) Co₂ O₅+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.

Original language	English
Article number	094101
Journal	Applied Physics Letters
Volume	97
Issue number	9
DOIs	https://doi.org/10.1063/1.3484964
State	Published - 30 Aug 2010
Externally published	Yes

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title = "PO2 dependant resistance switch effect in highly epitaxial (LaBa) Co2 O5+δ thin films",

abstract = "Giant resistance switching behavior in mixed conductive (LaBa) Co 2 O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99\% was achieved in the films during a change of 4\% H2 /96\% N2 to oxygen at temperature range of 400-780°C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa) Co2 O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.",

author = "Jian Liu and Gregory Collins and Ming Liu and Chen, \{C. L.\} and Jiechao Jiang and Meletis, \{Efsftathios I.\} and Qingyu Zhang and Chuang Dong",

year = "2010",

month = aug,

day = "30",

doi = "10.1063/1.3484964",

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volume = "97",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - PO2 dependant resistance switch effect in highly epitaxial (LaBa) Co2 O5+δ thin films

AU - Liu, Jian

AU - Collins, Gregory

AU - Liu, Ming

AU - Chen, C. L.

AU - Jiang, Jiechao

AU - Meletis, Efsftathios I.

AU - Zhang, Qingyu

AU - Dong, Chuang

PY - 2010/8/30

Y1 - 2010/8/30

N2 - Giant resistance switching behavior in mixed conductive (LaBa) Co 2 O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2 /96% N2 to oxygen at temperature range of 400-780°C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa) Co2 O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.

AB - Giant resistance switching behavior in mixed conductive (LaBa) Co 2 O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2 /96% N2 to oxygen at temperature range of 400-780°C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa) Co2 O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.

UR - https://www.scopus.com/pages/publications/77956363861

U2 - 10.1063/1.3484964

DO - 10.1063/1.3484964

M3 - 文章

AN - SCOPUS:77956363861

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 094101

ER -

PO₂ dependant resistance switch effect in highly epitaxial (LaBa) Co₂ O₅+δ thin films

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