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Polymorphous GdScO3 as high permittivity dielectric

  • A. Schäfer
  • , K. Rahmanizadeh
  • , G. Bihlmayer
  • , M. Luysberg
  • , F. Wendt
  • , A. Besmehn
  • , A. Fox
  • , M. Schnee
  • , G. Niu
  • , T. Schroeder
  • , S. Mantl
  • , H. Hardtdegen
  • , M. Mikulics
  • , J. Schubert
  • Jülich Research Centre
  • Fundamentals of Future Information Technologies
  • Innovations for High Performance Microelectronics

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Four different polymorphs of GdScO3 are assessed theoretically and experimentally with respect to their suitability as a dielectric. The calculations carried out by density functional theory reveal lattice constants, band gaps and the energies of formation of three crystal phases. Experimentally all three crystal phases and the amorphous phase can be realized as thin films by pulsed laser deposition using various growth templates. Their respective crystal structures are confirmed by X-ray diffraction and transmission electron microscopy reflecting the calculated lattice constants. X-ray photoelectron spectroscopy unveils the band gaps of the different polymorphs of GdScO3 which are above 5 eV for all films demonstrating good insulating properties. From capacitance voltage measurements, high permittivities of up to 27 for hexagonal GdScO3 are deduced.

Original languageEnglish
Pages (from-to)514-520
Number of pages7
JournalJournal of Alloys and Compounds
Volume651
DOIs
StatePublished - 5 Dec 2015
Externally publishedYes

Keywords

  • Epitaxial growth
  • High-k materials
  • Thin oxide films

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