Polymer-assisted MOD preparation of PbZr_0.52Ti _0.48O₃ thick films for mems applications

PbZr0.52.Ti_0.48O₃ (PZT) (52/48)-thick films with thickness between 1-5 fim have been prepared by a metallo-organic decomposition process modified by polymer, polyvinyl acetate) (PVAc). It has been found that PVAc can increase the single-layer thickness of PZT films. The PZT films with a single-layer thickness over 0.3 μm have been obtained. The crack-free PZT films annealed at 650-700°C for 3 min exhibit a pure perovskite phase and good electrical properties with dielectric constant between 800-1200, dielectric loss less than 5%, remnant polarization around 28 μC/cm² and coercive field less than 100 kV/cm. PZT thick films prepared in this study are promising materials for MEMS applications.