Polarized neutron reflectometry study on the modulation of resistance and magnetism in resistive switching cobalt ferrite thin films

Sheng Cheng; Lvkang Shen; Shaodong Cheng; Chunrui Ma; Ming Liu; Tao Zhu

doi:10.1063/5.0122216

Polarized neutron reflectometry study on the modulation of resistance and magnetism in resistive switching cobalt ferrite thin films

Sheng Cheng
, Lvkang Shen
, Shaodong Cheng
, Chunrui Ma
, Ming Liu
, Tao Zhu

CAS - Institute of High Energy Physics
Spallation Neutron Source Science Center
Xi'an Jiaotong University
CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this work, the resistive switching and electrical-control of magnetization in Pt/CoFe2O4/Nb:SrTiO3 heterostructures have been investigated. The films exhibit a classic bipolar resistive switching effect with a maximum switch ratio of about 5 × 103 and good anti-fatigue performance. Associated with resistive switching, the saturated magnetization of the thin film at high resistance state is found to be larger than that at low resistance state. Meanwhile, polarized neutron reflectivity of the thin film under different resistance states was in situ measured. The results reveal that the interfacial migration of oxygen vacancies driven by an applied electric field plays an important role in the modulation of resistive and magnetism of CoFe2O4 resistive switching devices.

Original language	English
Article number	211602
Journal	Applied Physics Letters
Volume	121
Issue number	21
DOIs	https://doi.org/10.1063/5.0122216
State	Published - 21 Nov 2022

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10.1063/5.0122216

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title = "Polarized neutron reflectometry study on the modulation of resistance and magnetism in resistive switching cobalt ferrite thin films",

abstract = "In this work, the resistive switching and electrical-control of magnetization in Pt/CoFe2O4/Nb:SrTiO3 heterostructures have been investigated. The films exhibit a classic bipolar resistive switching effect with a maximum switch ratio of about 5 × 103 and good anti-fatigue performance. Associated with resistive switching, the saturated magnetization of the thin film at high resistance state is found to be larger than that at low resistance state. Meanwhile, polarized neutron reflectivity of the thin film under different resistance states was in situ measured. The results reveal that the interfacial migration of oxygen vacancies driven by an applied electric field plays an important role in the modulation of resistive and magnetism of CoFe2O4 resistive switching devices.",

author = "Sheng Cheng and Lvkang Shen and Shaodong Cheng and Chunrui Ma and Ming Liu and Tao Zhu",

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T1 - Polarized neutron reflectometry study on the modulation of resistance and magnetism in resistive switching cobalt ferrite thin films

AU - Cheng, Sheng

AU - Shen, Lvkang

AU - Cheng, Shaodong

AU - Ma, Chunrui

AU - Liu, Ming

AU - Zhu, Tao

PY - 2022/11/21

Y1 - 2022/11/21

N2 - In this work, the resistive switching and electrical-control of magnetization in Pt/CoFe2O4/Nb:SrTiO3 heterostructures have been investigated. The films exhibit a classic bipolar resistive switching effect with a maximum switch ratio of about 5 × 103 and good anti-fatigue performance. Associated with resistive switching, the saturated magnetization of the thin film at high resistance state is found to be larger than that at low resistance state. Meanwhile, polarized neutron reflectivity of the thin film under different resistance states was in situ measured. The results reveal that the interfacial migration of oxygen vacancies driven by an applied electric field plays an important role in the modulation of resistive and magnetism of CoFe2O4 resistive switching devices.

AB - In this work, the resistive switching and electrical-control of magnetization in Pt/CoFe2O4/Nb:SrTiO3 heterostructures have been investigated. The films exhibit a classic bipolar resistive switching effect with a maximum switch ratio of about 5 × 103 and good anti-fatigue performance. Associated with resistive switching, the saturated magnetization of the thin film at high resistance state is found to be larger than that at low resistance state. Meanwhile, polarized neutron reflectivity of the thin film under different resistance states was in situ measured. The results reveal that the interfacial migration of oxygen vacancies driven by an applied electric field plays an important role in the modulation of resistive and magnetism of CoFe2O4 resistive switching devices.

UR - https://www.scopus.com/pages/publications/85144012161

U2 - 10.1063/5.0122216

DO - 10.1063/5.0122216

M3 - 文章

AN - SCOPUS:85144012161

SN - 0003-6951

VL - 121

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211602

ER -

Polarized neutron reflectometry study on the modulation of resistance and magnetism in resistive switching cobalt ferrite thin films

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