Polar surface dominated octagonal Sn doped ZnO nanowires and their room-temperature photoluminance properties

Hong Bo Wang; Fei Ma; Liang Zhou; Yi Qin; Yang Shuo Sun; Yi Ku Xu; Yong Nan Chen; Ke Wei Xu; Da Yan Ma

doi:10.1016/j.apsusc.2018.12.282

Polar surface dominated octagonal Sn doped ZnO nanowires and their room-temperature photoluminance properties

Hong Bo Wang
, Fei Ma
, Liang Zhou
, Yi Qin
, Yang Shuo Sun
, Yi Ku Xu
, Yong Nan Chen
, Ke Wei Xu
, Da Yan Ma

School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Polar surface dominated Sn doped ZnO nanowires (NWs) with an octagonal shaped cross section have been fabricated by chemical vapor deposition method. The NWs grew along [011¯0] direction, and were wrapped by non-polar surface (21¯1¯0) and polar surfaces (0001) and (101¯1). Planar defects in (0001) plane were formed in the middle of the doped NWs, and strain concentration occurred around the planar defects, which might lower the energy in the wurtzite lattice and thus maintain polar surface dominated configuration. X-ray photoelectron spectroscopy (XPS) and Raman tests reveal that the concentration of Oxygen vacancy (V _O ) was significantly lowered after doping, which led to the reduced deep level emission (DLE).

Original language	English
Pages (from-to)	265-270
Number of pages	6
Journal	Applied Surface Science
Volume	476
DOIs	https://doi.org/10.1016/j.apsusc.2018.12.282
State	Published - 15 May 2019

Keywords

Microstructure
Photoluminance
Polar surface
Sn-doped ZnO Nanowires

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10.1016/j.apsusc.2018.12.282

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title = "Polar surface dominated octagonal Sn doped ZnO nanowires and their room-temperature photoluminance properties",

abstract = " Polar surface dominated Sn doped ZnO nanowires (NWs) with an octagonal shaped cross section have been fabricated by chemical vapor deposition method. The NWs grew along [011¯0] direction, and were wrapped by non-polar surface (21¯1¯0) and polar surfaces (0001) and (101¯1). Planar defects in (0001) plane were formed in the middle of the doped NWs, and strain concentration occurred around the planar defects, which might lower the energy in the wurtzite lattice and thus maintain polar surface dominated configuration. X-ray photoelectron spectroscopy (XPS) and Raman tests reveal that the concentration of Oxygen vacancy (V O ) was significantly lowered after doping, which led to the reduced deep level emission (DLE).",

keywords = "Microstructure, Photoluminance, Polar surface, Sn-doped ZnO Nanowires",

author = "Wang, \{Hong Bo\} and Fei Ma and Liang Zhou and Yi Qin and Sun, \{Yang Shuo\} and Xu, \{Yi Ku\} and Chen, \{Yong Nan\} and Xu, \{Ke Wei\} and Ma, \{Da Yan\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = may,

day = "15",

doi = "10.1016/j.apsusc.2018.12.282",

language = "英语",

volume = "476",

pages = "265--270",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Polar surface dominated octagonal Sn doped ZnO nanowires and their room-temperature photoluminance properties

AU - Wang, Hong Bo

AU - Ma, Fei

AU - Zhou, Liang

AU - Qin, Yi

AU - Sun, Yang Shuo

AU - Xu, Yi Ku

AU - Chen, Yong Nan

AU - Xu, Ke Wei

AU - Ma, Da Yan

PY - 2019/5/15

Y1 - 2019/5/15

N2 - Polar surface dominated Sn doped ZnO nanowires (NWs) with an octagonal shaped cross section have been fabricated by chemical vapor deposition method. The NWs grew along [011¯0] direction, and were wrapped by non-polar surface (21¯1¯0) and polar surfaces (0001) and (101¯1). Planar defects in (0001) plane were formed in the middle of the doped NWs, and strain concentration occurred around the planar defects, which might lower the energy in the wurtzite lattice and thus maintain polar surface dominated configuration. X-ray photoelectron spectroscopy (XPS) and Raman tests reveal that the concentration of Oxygen vacancy (V O ) was significantly lowered after doping, which led to the reduced deep level emission (DLE).

AB - Polar surface dominated Sn doped ZnO nanowires (NWs) with an octagonal shaped cross section have been fabricated by chemical vapor deposition method. The NWs grew along [011¯0] direction, and were wrapped by non-polar surface (21¯1¯0) and polar surfaces (0001) and (101¯1). Planar defects in (0001) plane were formed in the middle of the doped NWs, and strain concentration occurred around the planar defects, which might lower the energy in the wurtzite lattice and thus maintain polar surface dominated configuration. X-ray photoelectron spectroscopy (XPS) and Raman tests reveal that the concentration of Oxygen vacancy (V O ) was significantly lowered after doping, which led to the reduced deep level emission (DLE).

KW - Microstructure

KW - Photoluminance

KW - Polar surface

KW - Sn-doped ZnO Nanowires

UR - https://www.scopus.com/pages/publications/85059885412

U2 - 10.1016/j.apsusc.2018.12.282

DO - 10.1016/j.apsusc.2018.12.282

M3 - 文章

AN - SCOPUS:85059885412

SN - 0169-4332

VL - 476

SP - 265

EP - 270

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Polar surface dominated octagonal Sn doped ZnO nanowires and their room-temperature photoluminance properties

Abstract

Keywords

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