Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)

S. Yin; G. Le Rhun; E. Defay; B. Vilquin; G. Niu; Y. Robach; C. Dragoi; L. Trupina; L. Pintilie

doi:10.1109/ISAF.2012.6297812

Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001)

S. Yin
, G. Le Rhun
, E. Defay
, B. Vilquin
, G. Niu
, Y. Robach
, C. Dragoi
, L. Trupina
, L. Pintilie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Epitaxial Pb(Zr _0.52Ti _0.48)O ₃ (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO ₃ (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO ₂, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO ₃ (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

Original language	English
Title of host publication	Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012
DOIs	https://doi.org/10.1109/ISAF.2012.6297812
State	Published - 2012
Externally published	Yes
Event	2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM - Aveiro, Portugal Duration: 9 Jul 2012 → 13 Jul 2012

Publication series

Name	Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012

Conference

Conference	2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM
Country/Territory	Portugal
City	Aveiro
Period	9/07/12 → 13/07/12

Keywords

Epitaxy
MBE
PLD
PZT
SRO
STO
Sol-gel
piezoelectricity
single crystal

Access to Document

10.1109/ISAF.2012.6297812

Cite this

Yin, S., Le Rhun, G., Defay, E., Vilquin, B., Niu, G., Robach, Y., Dragoi, C., Trupina, L., & Pintilie, L. (2012). Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). In Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012 Article 6297812 (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012). https://doi.org/10.1109/ISAF.2012.6297812

Yin, S. ; Le Rhun, G. ; Defay, E. et al. / Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012).

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title = "Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)",

abstract = "Epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO 3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO 2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO 3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.",

keywords = "Epitaxy, MBE, PLD, PZT, SRO, STO, Sol-gel, piezoelectricity, single crystal",

author = "S. Yin and \{Le Rhun\}, G. and E. Defay and B. Vilquin and G. Niu and Y. Robach and C. Dragoi and L. Trupina and L. Pintilie",

year = "2012",

doi = "10.1109/ISAF.2012.6297812",

language = "英语",

isbn = "9781467326681",

series = "Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012",

booktitle = "Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012",

note = "2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM ; Conference date: 09-07-2012 Through 13-07-2012",

}

Yin, S, Le Rhun, G, Defay, E, Vilquin, B, Niu, G, Robach, Y, Dragoi, C, Trupina, L & Pintilie, L 2012, Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). in Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012., 6297812, Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM, Aveiro, Portugal, 9/07/12. https://doi.org/10.1109/ISAF.2012.6297812

Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). / Yin, S.; Le Rhun, G.; Defay, E. et al.
Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. 6297812 (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)

AU - Yin, S.

AU - Le Rhun, G.

AU - Defay, E.

AU - Vilquin, B.

AU - Niu, G.

AU - Robach, Y.

AU - Dragoi, C.

AU - Trupina, L.

AU - Pintilie, L.

PY - 2012

Y1 - 2012

N2 - Epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO 3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO 2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO 3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

AB - Epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO 3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO 2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO 3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

KW - Epitaxy

KW - MBE

KW - PLD

KW - PZT

KW - SRO

KW - STO

KW - Sol-gel

KW - piezoelectricity

KW - single crystal

UR - https://www.scopus.com/pages/publications/84867911460

U2 - 10.1109/ISAF.2012.6297812

DO - 10.1109/ISAF.2012.6297812

M3 - 会议稿件

AN - SCOPUS:84867911460

SN - 9781467326681

T3 - Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012

BT - Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012

T2 - 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM

Y2 - 9 July 2012 through 13 July 2012

ER -

Yin S, Le Rhun G, Defay E, Vilquin B, Niu G, Robach Y et al. Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). In Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. 6297812. (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012). doi: 10.1109/ISAF.2012.6297812