TY - GEN
T1 - Piezoresistive Accelerometer Based on Amorphous Carbon Films
AU - Zhang, Qi
AU - Pang, Xing
AU - Zhao, Yulong
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Amorphous carbon film (a-C) has many outstanding characteristics, such as low friction, anti-wear properties and chemical stability. Its preparation is low cost, simple, and can well combined with microelectromechanical system (MEMS) process. Because it has remarkable piezoresistive effect, a-C piezoresistor was integrated in accelerometer to get a high-performance sensor. Using electron cyclotron resonance (ECR) plasma sputtering and ion evaporation deposition process, a-C was integrated on the quad-beam-mass structure as piezoresistor which had high gauge factor. By adjusting process parameters, the gauge factor could be controlled. In the ECR sputtering process, bias voltage +50 V and +100 V was applied to the substrate, respectively. And the gauge factor was within the range of 3.2-6.7 and 5.5-9.6; in the other process, a negative bias voltage 2 kV was applied to the substrate, then the hydrogenated amorphous carbon films (a-C: H) was deposited, which had a higher gauge factor 40.5-54.2. A MEMS piezoresistive accelerometer based on a-C piezoresistor was designed and fabricated. The piezoresistive accelerometer which used a-C: H had higher sensitivity 0.023 mV/V/g and natural frequency 18.1 kHz. This study provided a new method to further improvement of the comprehensive performance of MEMS piezoresistive accelerometer.
AB - Amorphous carbon film (a-C) has many outstanding characteristics, such as low friction, anti-wear properties and chemical stability. Its preparation is low cost, simple, and can well combined with microelectromechanical system (MEMS) process. Because it has remarkable piezoresistive effect, a-C piezoresistor was integrated in accelerometer to get a high-performance sensor. Using electron cyclotron resonance (ECR) plasma sputtering and ion evaporation deposition process, a-C was integrated on the quad-beam-mass structure as piezoresistor which had high gauge factor. By adjusting process parameters, the gauge factor could be controlled. In the ECR sputtering process, bias voltage +50 V and +100 V was applied to the substrate, respectively. And the gauge factor was within the range of 3.2-6.7 and 5.5-9.6; in the other process, a negative bias voltage 2 kV was applied to the substrate, then the hydrogenated amorphous carbon films (a-C: H) was deposited, which had a higher gauge factor 40.5-54.2. A MEMS piezoresistive accelerometer based on a-C piezoresistor was designed and fabricated. The piezoresistive accelerometer which used a-C: H had higher sensitivity 0.023 mV/V/g and natural frequency 18.1 kHz. This study provided a new method to further improvement of the comprehensive performance of MEMS piezoresistive accelerometer.
KW - MEMS
KW - accelerometer
KW - amorphous carbon
KW - high natural frequency
KW - high sensitivity
KW - piezoresistivity
UR - https://www.scopus.com/pages/publications/85215280112
U2 - 10.1109/SENSORS60989.2024.10785215
DO - 10.1109/SENSORS60989.2024.10785215
M3 - 会议稿件
AN - SCOPUS:85215280112
T3 - Proceedings of IEEE Sensors
BT - 2024 IEEE Sensors, SENSORS 2024 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE Sensors, SENSORS 2024
Y2 - 20 October 2024 through 23 October 2024
ER -