TY - GEN
T1 - Piezoelectric Performances of Sol-Gel Deposited PMN-PT Thin Films Buffered by Pt, PZT, and LNO Layers
AU - Ren, Zongqiang
AU - Zhao, Yiming
AU - Zhang, Yunfei
AU - Wu, Ming
AU - Gao, Jinghui
AU - Zhong, Lisheng
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - In this study, PMN-PT piezoelectric thin films were fabricated on silicon substrates using the sol-gel method. The effects of different buffer layers - Pt, PZT/Pt, and LNO - on the film's crystallinity and piezoelectric performance were systematically compared. The results show that the LNO buffer layer significantly promotes (100)-oriented growth, improves crystallinity and surface smoothness, and exhibits the best piezoelectric response in piezoresponse force microscopy tests. This indicates that the LNO buffer not only enhances the film's structural and surface quality but also effectively improves its piezoelectric properties, providing both theoretical and practical guidance for optimizing high-performance piezoelectric devices and advancing the application of sol-gel techniques in piezoelectric materials.
AB - In this study, PMN-PT piezoelectric thin films were fabricated on silicon substrates using the sol-gel method. The effects of different buffer layers - Pt, PZT/Pt, and LNO - on the film's crystallinity and piezoelectric performance were systematically compared. The results show that the LNO buffer layer significantly promotes (100)-oriented growth, improves crystallinity and surface smoothness, and exhibits the best piezoelectric response in piezoresponse force microscopy tests. This indicates that the LNO buffer not only enhances the film's structural and surface quality but also effectively improves its piezoelectric properties, providing both theoretical and practical guidance for optimizing high-performance piezoelectric devices and advancing the application of sol-gel techniques in piezoelectric materials.
UR - https://www.scopus.com/pages/publications/105025004792
U2 - 10.1109/CEIDP61707.2025.11218494
DO - 10.1109/CEIDP61707.2025.11218494
M3 - 会议稿件
AN - SCOPUS:105025004792
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
SP - 869
EP - 872
BT - 2025 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 100th IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2025
Y2 - 14 September 2025 through 17 September 2025
ER -