Photovoltaic Tunable AMR Sensor

Liwen Liang; Yifan Zhao; Wanjun Peng; Rui Wang; Chenying Wang; Libo Zhao; Zhuangde Jiang; Ming Liu; Ziyao Zhou

doi:10.1109/IMWS-AMP54652.2022.10106838

Photovoltaic Tunable AMR Sensor

Liwen Liang
, Yifan Zhao
, Wanjun Peng
, Rui Wang
, Chenying Wang
, Libo Zhao
, Zhuangde Jiang
, Ming Liu
, Ziyao Zhou

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a photovoltaic AMR sensor (PET/Ta (3 nm)/NiFe (d nm)/ PTB7-Th:PC71BM (80 nm)/Pt (3 nm)) is investigated. The device achieved maximal 364 Oe ferromagnetic resonance field shift and 402 Oe magnetic anisotropy field change under simulated sunlight. Significantly, the sensor achieved a 3-4 Ω magnetoresistance increase and a 36.8 % AMR ratio rise by sunlight illumination. And the increase of NiFe thin film thickness decreased the variation of AMR ratio. Excellent reversibility and reproducibility have also been exhibited. The doped photoelectrons can decrease the magnetic moment of NiFe and enhance the magnetoresistance by occupying 3d orbitals. The results demonstrate a promising application possibility in AMR sensors for photovoltaic spintronic devices in the future.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665478342
DOIs	https://doi.org/10.1109/IMWS-AMP54652.2022.10106838
State	Published - 2022
Event	2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Guangzhou, China Duration: 27 Nov 2022 → 29 Nov 2022

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings

Conference

Conference	2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022
Country/Territory	China
City	Guangzhou
Period	27/11/22 → 29/11/22

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Anisotropy magnetoresistance effect
Ferromagnetic resonance field
Magnetic anisotropy
Photovoltaic/ferromagnetic heterostructure

Access to Document

10.1109/IMWS-AMP54652.2022.10106838

Cite this

Liang, L., Zhao, Y., Peng, W., Wang, R., Wang, C., Zhao, L., Jiang, Z., Liu, M., & Zhou, Z. (2022). Photovoltaic Tunable AMR Sensor. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP54652.2022.10106838

Liang, Liwen ; Zhao, Yifan ; Peng, Wanjun et al. / Photovoltaic Tunable AMR Sensor. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings).

@inproceedings{e40b40754c56417d843a829cc892c800,

title = "Photovoltaic Tunable AMR Sensor",

abstract = "In this paper, a photovoltaic AMR sensor (PET/Ta (3 nm)/NiFe (d nm)/ PTB7-Th:PC71BM (80 nm)/Pt (3 nm)) is investigated. The device achieved maximal 364 Oe ferromagnetic resonance field shift and 402 Oe magnetic anisotropy field change under simulated sunlight. Significantly, the sensor achieved a 3-4 Ω magnetoresistance increase and a 36.8 \% AMR ratio rise by sunlight illumination. And the increase of NiFe thin film thickness decreased the variation of AMR ratio. Excellent reversibility and reproducibility have also been exhibited. The doped photoelectrons can decrease the magnetic moment of NiFe and enhance the magnetoresistance by occupying 3d orbitals. The results demonstrate a promising application possibility in AMR sensors for photovoltaic spintronic devices in the future.",

keywords = "Anisotropy magnetoresistance effect, Ferromagnetic resonance field, Magnetic anisotropy, Photovoltaic/ferromagnetic heterostructure",

author = "Liwen Liang and Yifan Zhao and Wanjun Peng and Rui Wang and Chenying Wang and Libo Zhao and Zhuangde Jiang and Ming Liu and Ziyao Zhou",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 ; Conference date: 27-11-2022 Through 29-11-2022",

year = "2022",

doi = "10.1109/IMWS-AMP54652.2022.10106838",

language = "英语",

series = "IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings",

}

Liang, L, Zhao, Y, Peng, W, Wang, R, Wang, C, Zhao, L , Jiang, Z , Liu, M & Zhou, Z 2022, Photovoltaic Tunable AMR Sensor. in IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022, Guangzhou, China, 27/11/22. https://doi.org/10.1109/IMWS-AMP54652.2022.10106838

Photovoltaic Tunable AMR Sensor. / Liang, Liwen; Zhao, Yifan; Peng, Wanjun et al.
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photovoltaic Tunable AMR Sensor

AU - Liang, Liwen

AU - Zhao, Yifan

AU - Peng, Wanjun

AU - Wang, Rui

AU - Wang, Chenying

AU - Zhao, Libo

AU - Jiang, Zhuangde

AU - Liu, Ming

AU - Zhou, Ziyao

PY - 2022

Y1 - 2022

N2 - In this paper, a photovoltaic AMR sensor (PET/Ta (3 nm)/NiFe (d nm)/ PTB7-Th:PC71BM (80 nm)/Pt (3 nm)) is investigated. The device achieved maximal 364 Oe ferromagnetic resonance field shift and 402 Oe magnetic anisotropy field change under simulated sunlight. Significantly, the sensor achieved a 3-4 Ω magnetoresistance increase and a 36.8 % AMR ratio rise by sunlight illumination. And the increase of NiFe thin film thickness decreased the variation of AMR ratio. Excellent reversibility and reproducibility have also been exhibited. The doped photoelectrons can decrease the magnetic moment of NiFe and enhance the magnetoresistance by occupying 3d orbitals. The results demonstrate a promising application possibility in AMR sensors for photovoltaic spintronic devices in the future.

AB - In this paper, a photovoltaic AMR sensor (PET/Ta (3 nm)/NiFe (d nm)/ PTB7-Th:PC71BM (80 nm)/Pt (3 nm)) is investigated. The device achieved maximal 364 Oe ferromagnetic resonance field shift and 402 Oe magnetic anisotropy field change under simulated sunlight. Significantly, the sensor achieved a 3-4 Ω magnetoresistance increase and a 36.8 % AMR ratio rise by sunlight illumination. And the increase of NiFe thin film thickness decreased the variation of AMR ratio. Excellent reversibility and reproducibility have also been exhibited. The doped photoelectrons can decrease the magnetic moment of NiFe and enhance the magnetoresistance by occupying 3d orbitals. The results demonstrate a promising application possibility in AMR sensors for photovoltaic spintronic devices in the future.

KW - Anisotropy magnetoresistance effect

KW - Ferromagnetic resonance field

KW - Magnetic anisotropy

KW - Photovoltaic/ferromagnetic heterostructure

UR - https://www.scopus.com/pages/publications/85159185328

U2 - 10.1109/IMWS-AMP54652.2022.10106838

DO - 10.1109/IMWS-AMP54652.2022.10106838

M3 - 会议稿件

AN - SCOPUS:85159185328

T3 - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings

BT - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022

Y2 - 27 November 2022 through 29 November 2022

ER -

Liang L, Zhao Y, Peng W, Wang R, Wang C, Zhao L et al. Photovoltaic Tunable AMR Sensor. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2022. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings). doi: 10.1109/IMWS-AMP54652.2022.10106838

Photovoltaic Tunable AMR Sensor

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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