Photovoltaic effect of ferroelectric PLZT in a layered and preferentially oriented film

Masaaki Ichiki; Harumi Furue; Takeshi Kobayashi; Yasushi Morikawa; Takeshi Nakada; Chiaki Endo; Kazuhiro Nonaka; Ryutaro Maeda

doi:10.1117/12.638323

Photovoltaic effect of ferroelectric PLZT in a layered and preferentially oriented film

Masaaki Ichiki
, Harumi Furue
, Takeshi Kobayashi
, Yasushi Morikawa
, Takeshi Nakada
, Chiaki Endo
, Kazuhiro Nonaka
, Ryutaro Maeda

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Photovoltaic (Pb,La)(Zr,Ti)O₃ (PLZT) films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition (MOD) method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of microelectro-mechanical systems (MEMS).

Original language	English
Article number	60350P
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6035
DOIs	https://doi.org/10.1117/12.638323
State	Published - 2006
Externally published	Yes
Event	Microelectronics: Design, Technology, and Packaging II - Brisbane, Australia Duration: 12 Dec 2005 → 14 Dec 2005

Keywords

Layered film
MOD
PLZT
Perovskite
Photovoltaic effect
Tensor surface

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1117/12.638323

Cite this

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title = "Photovoltaic effect of ferroelectric PLZT in a layered and preferentially oriented film",

abstract = "Photovoltaic (Pb,La)(Zr,Ti)O3 (PLZT) films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition (MOD) method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of microelectro-mechanical systems (MEMS).",

keywords = "Layered film, MOD, PLZT, Perovskite, Photovoltaic effect, Tensor surface",

author = "Masaaki Ichiki and Harumi Furue and Takeshi Kobayashi and Yasushi Morikawa and Takeshi Nakada and Chiaki Endo and Kazuhiro Nonaka and Ryutaro Maeda",

year = "2006",

doi = "10.1117/12.638323",

language = "英语",

volume = "6035",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Microelectronics: Design, Technology, and Packaging II ; Conference date: 12-12-2005 Through 14-12-2005",

}

TY - JOUR

T1 - Photovoltaic effect of ferroelectric PLZT in a layered and preferentially oriented film

AU - Ichiki, Masaaki

AU - Furue, Harumi

AU - Kobayashi, Takeshi

AU - Morikawa, Yasushi

AU - Nakada, Takeshi

AU - Endo, Chiaki

AU - Nonaka, Kazuhiro

AU - Maeda, Ryutaro

PY - 2006

Y1 - 2006

N2 - Photovoltaic (Pb,La)(Zr,Ti)O3 (PLZT) films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition (MOD) method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of microelectro-mechanical systems (MEMS).

AB - Photovoltaic (Pb,La)(Zr,Ti)O3 (PLZT) films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition (MOD) method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of microelectro-mechanical systems (MEMS).

KW - Layered film

KW - MOD

KW - PLZT

KW - Perovskite

KW - Photovoltaic effect

KW - Tensor surface

UR - https://www.scopus.com/pages/publications/33645132857

U2 - 10.1117/12.638323

DO - 10.1117/12.638323

M3 - 会议文章

AN - SCOPUS:33645132857

SN - 0277-786X

VL - 6035

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 60350P

T2 - Microelectronics: Design, Technology, and Packaging II

Y2 - 12 December 2005 through 14 December 2005

ER -

Photovoltaic effect of ferroelectric PLZT in a layered and preferentially oriented film

Abstract

Keywords

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