Abstract
The electron emission due to 2.06um Q-switched laser excitation on Cs, O2 activated GaAs photocathodes with different sensitivity has been measured. The cubic dependence on fluence is consistent with three-photon excitation across the bandgap of GaAs semiconductor. The same cubic response in photoelectron emission at liquid nitrogen temperature (77K) demonstrates that the electron emission is three-photon photoemission and thermal emission is negligible. The characteristics of multiphoton photoemission is strongly determined by the sensitivity of photocathode. A formula basing on three-order perturbation theory accounts quantitatively for our observation.
| Original language | English |
|---|---|
| Pages (from-to) | 120-126 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1415 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
| Event | Modeling and Simulation of Laser Systems II - Los Angeles, CA, USA Duration: 23 Jan 1991 → 24 Jan 1991 |