Phase transitions in [001]-oriented morphotropic PbZr0.52Ti 0.48O3 thin film deposited onto SrTiO3-buffered Si substrate

Yin Shi; M. Cueff; Gang Niu; G. Le Rhun; B. Vilquin; G. Saint Girons; R. Bachelet; B. Gautier; Y. Robach; P. Gemeiner; N. Guiblin; E. Defay; B. Dkhil

doi:10.1063/1.4881818

Phase transitions in [001]-oriented morphotropic PbZr_0.52Ti _0.48O₃ thin film deposited onto SrTiO₃-buffered Si substrate

Yin Shi
, M. Cueff
, Gang Niu
, G. Le Rhun
, B. Vilquin
, G. Saint Girons
, R. Bachelet
, B. Gautier
, Y. Robach
, P. Gemeiner
, N. Guiblin
, E. Defay
, B. Dkhil

Commissariat à l’énergie atomique et aux énergies alternatives
CNRS UMR 5270
Laboratoire Structures, Propriétés et Modélisation des Solides

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An 85 nm-thick morphotropic PbZr_0.52Ti_0.48O ₃ (PZT) film grown epitaxially and [001]-oriented onto a SrTiO ₃-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at T_rt ∼ 500 K and T _c ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of T_rt value with respect to the bulk one and the weakly affected T_c (T _c bulk ∼ 665 K) are explained assuming misfit strain changes when crossing T_rt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.

Original language	English
Article number	214108
Journal	Journal of Applied Physics
Volume	115
Issue number	21
DOIs	https://doi.org/10.1063/1.4881818
State	Published - 7 Jun 2014
Externally published	Yes

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Shi, Y., Cueff, M., Niu, G., Le Rhun, G., Vilquin, B., Saint Girons, G., Bachelet, R., Gautier, B., Robach, Y., Gemeiner, P., Guiblin, N., Defay, E., & Dkhil, B. (2014). Phase transitions in [001]-oriented morphotropic PbZr_0.52Ti _0.48O₃ thin film deposited onto SrTiO₃-buffered Si substrate. Journal of Applied Physics, 115(21), Article 214108. https://doi.org/10.1063/1.4881818

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title = "Phase transitions in [001]-oriented morphotropic PbZr0.52Ti 0.48O3 thin film deposited onto SrTiO3-buffered Si substrate",

abstract = "An 85 nm-thick morphotropic PbZr0.52Ti0.48O 3 (PZT) film grown epitaxially and [001]-oriented onto a SrTiO 3-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at Trt ∼ 500 K and T c ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of Trt value with respect to the bulk one and the weakly affected Tc (T c bulk ∼ 665 K) are explained assuming misfit strain changes when crossing Trt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.",

author = "Yin Shi and M. Cueff and Gang Niu and \{Le Rhun\}, G. and B. Vilquin and \{Saint Girons\}, G. and R. Bachelet and B. Gautier and Y. Robach and P. Gemeiner and N. Guiblin and E. Defay and B. Dkhil",

year = "2014",

month = jun,

day = "7",

doi = "10.1063/1.4881818",

language = "英语",

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TY - JOUR

T1 - Phase transitions in [001]-oriented morphotropic PbZr0.52Ti 0.48O3 thin film deposited onto SrTiO3-buffered Si substrate

AU - Shi, Yin

AU - Cueff, M.

AU - Niu, Gang

AU - Le Rhun, G.

AU - Vilquin, B.

AU - Saint Girons, G.

AU - Bachelet, R.

AU - Gautier, B.

AU - Robach, Y.

AU - Gemeiner, P.

AU - Guiblin, N.

AU - Defay, E.

AU - Dkhil, B.

PY - 2014/6/7

Y1 - 2014/6/7

N2 - An 85 nm-thick morphotropic PbZr0.52Ti0.48O 3 (PZT) film grown epitaxially and [001]-oriented onto a SrTiO 3-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at Trt ∼ 500 K and T c ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of Trt value with respect to the bulk one and the weakly affected Tc (T c bulk ∼ 665 K) are explained assuming misfit strain changes when crossing Trt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.

AB - An 85 nm-thick morphotropic PbZr0.52Ti0.48O 3 (PZT) film grown epitaxially and [001]-oriented onto a SrTiO 3-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at Trt ∼ 500 K and T c ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of Trt value with respect to the bulk one and the weakly affected Tc (T c bulk ∼ 665 K) are explained assuming misfit strain changes when crossing Trt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.

UR - https://www.scopus.com/pages/publications/84902590113

U2 - 10.1063/1.4881818

DO - 10.1063/1.4881818

M3 - 文章

AN - SCOPUS:84902590113

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 21

M1 - 214108

ER -

Phase transitions in [001]-oriented morphotropic PbZr_0.52Ti _0.48O₃ thin film deposited onto SrTiO₃-buffered Si substrate

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