Performance Regulation of a ZnO/WOx-Based Memristor and Its Application in an Emotion Circuit

Xizi Qin; Junda Hu; Hao Liu; Xin Xu; Feng Yang; Bai Sun; Yong Zhao; Mei Huang; Yong Zhang

doi:10.1021/acs.jpclett.3c00063

Performance Regulation of a ZnO/WO_x-Based Memristor and Its Application in an Emotion Circuit

Xizi Qin
, Junda Hu
, Hao Liu
, Xin Xu
, Feng Yang
, Bai Sun
, Yong Zhao
, Mei Huang
, Yong Zhang

Frontier Institute of Science and Technology

Southwest Jiaotong University
Fujian Normal University
Southwestern Institute of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The development of a memristor is very important for artificial intelligence and new electronic circuits. In this work, Ag(Al)/ZnO/WO_x/FTO memristors are fabricated by magnetron sputtering, and the device performance is further improved through annealing and oxygen supply during sputtering. The experimental data show that the FTO/WO_x/ZnO-O₂/Ag memristor has the largest high resistance state (HRS)/low resistance state (LRS) resistance ratio and the best durability. Through data fitting and analysis, the switching mechanism of memristors with different top electrodes is investigated. Furthermore, the physical model of the best performance memristor was established by Simulink, and an emotion-monitoring circuit was constructed on this basis. The circuit can be used to monitor and record the mood changes, and the feedback of the emotion monitoring can be fed back to the user to help them adjust the mood.

Original language	English
Pages (from-to)	3039-3046
Number of pages	8
Journal	Journal of Physical Chemistry Letters
Volume	14
Issue number	12
DOIs	https://doi.org/10.1021/acs.jpclett.3c00063
State	Published - 30 Mar 2023

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10.1021/acs.jpclett.3c00063

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title = "Performance Regulation of a ZnO/WOx-Based Memristor and Its Application in an Emotion Circuit",

abstract = "The development of a memristor is very important for artificial intelligence and new electronic circuits. In this work, Ag(Al)/ZnO/WOx/FTO memristors are fabricated by magnetron sputtering, and the device performance is further improved through annealing and oxygen supply during sputtering. The experimental data show that the FTO/WOx/ZnO-O2/Ag memristor has the largest high resistance state (HRS)/low resistance state (LRS) resistance ratio and the best durability. Through data fitting and analysis, the switching mechanism of memristors with different top electrodes is investigated. Furthermore, the physical model of the best performance memristor was established by Simulink, and an emotion-monitoring circuit was constructed on this basis. The circuit can be used to monitor and record the mood changes, and the feedback of the emotion monitoring can be fed back to the user to help them adjust the mood.",

author = "Xizi Qin and Junda Hu and Hao Liu and Xin Xu and Feng Yang and Bai Sun and Yong Zhao and Mei Huang and Yong Zhang",

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T1 - Performance Regulation of a ZnO/WOx-Based Memristor and Its Application in an Emotion Circuit

AU - Qin, Xizi

AU - Hu, Junda

AU - Liu, Hao

AU - Xu, Xin

AU - Yang, Feng

AU - Sun, Bai

AU - Zhao, Yong

AU - Huang, Mei

AU - Zhang, Yong

PY - 2023/3/30

Y1 - 2023/3/30

N2 - The development of a memristor is very important for artificial intelligence and new electronic circuits. In this work, Ag(Al)/ZnO/WOx/FTO memristors are fabricated by magnetron sputtering, and the device performance is further improved through annealing and oxygen supply during sputtering. The experimental data show that the FTO/WOx/ZnO-O2/Ag memristor has the largest high resistance state (HRS)/low resistance state (LRS) resistance ratio and the best durability. Through data fitting and analysis, the switching mechanism of memristors with different top electrodes is investigated. Furthermore, the physical model of the best performance memristor was established by Simulink, and an emotion-monitoring circuit was constructed on this basis. The circuit can be used to monitor and record the mood changes, and the feedback of the emotion monitoring can be fed back to the user to help them adjust the mood.

AB - The development of a memristor is very important for artificial intelligence and new electronic circuits. In this work, Ag(Al)/ZnO/WOx/FTO memristors are fabricated by magnetron sputtering, and the device performance is further improved through annealing and oxygen supply during sputtering. The experimental data show that the FTO/WOx/ZnO-O2/Ag memristor has the largest high resistance state (HRS)/low resistance state (LRS) resistance ratio and the best durability. Through data fitting and analysis, the switching mechanism of memristors with different top electrodes is investigated. Furthermore, the physical model of the best performance memristor was established by Simulink, and an emotion-monitoring circuit was constructed on this basis. The circuit can be used to monitor and record the mood changes, and the feedback of the emotion monitoring can be fed back to the user to help them adjust the mood.

UR - https://www.scopus.com/pages/publications/85151312517

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SN - 1948-7185

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EP - 3046

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 12

ER -

Performance Regulation of a ZnO/WO_x-Based Memristor and Its Application in an Emotion Circuit

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