Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3

Yan Feng Wang; Wei Wang; Xiaohui Chang; Haris Naeem Abbasi; Xiaofan Zhang; Ruozheng Wang; Hong Xing Wang

doi:10.1016/j.diamond.2019.107532

Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al₂O₃

Yan Feng Wang
, Wei Wang
, Xiaohui Chang
, Haris Naeem Abbasi
, Xiaofan Zhang
, Ruozheng Wang
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al₂O₃ bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al₂O₃ was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm² V⁻¹ s⁻¹ at V_GS = −1.5 V based on the relation between on-state resistance and 1/|V_GS-V_TH|.

Original language	English
Article number	107532
Journal	Diamond and Related Materials
Volume	99
DOIs	https://doi.org/10.1016/j.diamond.2019.107532
State	Published - Nov 2019

Keywords

2DHG
H-diamond
MOSFET
YSZ

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10.1016/j.diamond.2019.107532

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@article{4cf51998705c450890c61256e51b7022,

title = "Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3 ",

abstract = "Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al2O3 bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al2O3 was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm2 V−1 s−1 at VGS = −1.5 V based on the relation between on-state resistance and 1/|VGS-VTH|.",

keywords = "2DHG, H-diamond, MOSFET, YSZ",

author = "Wang, \{Yan Feng\} and Wei Wang and Xiaohui Chang and Abbasi, \{Haris Naeem\} and Xiaofan Zhang and Ruozheng Wang and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = nov,

doi = "10.1016/j.diamond.2019.107532",

language = "英语",

volume = "99",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3

AU - Wang, Yan Feng

AU - Wang, Wei

AU - Chang, Xiaohui

AU - Abbasi, Haris Naeem

AU - Zhang, Xiaofan

AU - Wang, Ruozheng

AU - Wang, Hong Xing

PY - 2019/11

Y1 - 2019/11

N2 - Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al2O3 bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al2O3 was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm2 V−1 s−1 at VGS = −1.5 V based on the relation between on-state resistance and 1/|VGS-VTH|.

AB - Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al2O3 bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al2O3 was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm2 V−1 s−1 at VGS = −1.5 V based on the relation between on-state resistance and 1/|VGS-VTH|.

KW - 2DHG

KW - H-diamond

KW - MOSFET

KW - YSZ

UR - https://www.scopus.com/pages/publications/85073095157

U2 - 10.1016/j.diamond.2019.107532

DO - 10.1016/j.diamond.2019.107532

M3 - 文章

AN - SCOPUS:85073095157

SN - 0925-9635

VL - 99

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 107532

ER -

Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al₂O₃

Abstract

Keywords

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