TY - JOUR
T1 - Performance-Improved Vertical Zr/Diamond Schottky Barrier Diode With Lanthanum Hexaboride Interfacial Layer
AU - Shao, Guoqing
AU - Wang, Juan
AU - Liu, Zhangcheng
AU - Wang, Yanfeng
AU - Wang, Wei
AU - Wang, Hong Xing
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/1
Y1 - 2021/9/1
N2 - We have demonstrated performance-improved vertical diamond Schottky barrier diode (SBD) by introducing a lanthanum hexaboride (LaB6) interfacial layer between Zr and diamond. The composition of LaB6 was characterized using X-ray photoelectron spectroscopy. The fabricated diamond SBD with LaB6 delivers a rectification ratio of 1010, a Schottky barrier height (SBH) of 1.53 eV, a saturation current density of 1.82 × 10−19 A/cm2, and a shunt resistance of 2.67 × 1012 Ω. These results indicate that with the inclusion of LaB6, diamond SBD exhibits improved SBH and reverse breakdown capability. Additionally, the trap-limited space-charge-limited current (SCLC) remains the determinant transport mechanism for diamond SBD with LaB6. Meanwhile, the interface states density is significantly reduced due to the effect of LaB6. These results suggest the great potential of vertical Zr/LaB6/p-diamond SBD as future high-performance power rectifiers.
AB - We have demonstrated performance-improved vertical diamond Schottky barrier diode (SBD) by introducing a lanthanum hexaboride (LaB6) interfacial layer between Zr and diamond. The composition of LaB6 was characterized using X-ray photoelectron spectroscopy. The fabricated diamond SBD with LaB6 delivers a rectification ratio of 1010, a Schottky barrier height (SBH) of 1.53 eV, a saturation current density of 1.82 × 10−19 A/cm2, and a shunt resistance of 2.67 × 1012 Ω. These results indicate that with the inclusion of LaB6, diamond SBD exhibits improved SBH and reverse breakdown capability. Additionally, the trap-limited space-charge-limited current (SCLC) remains the determinant transport mechanism for diamond SBD with LaB6. Meanwhile, the interface states density is significantly reduced due to the effect of LaB6. These results suggest the great potential of vertical Zr/LaB6/p-diamond SBD as future high-performance power rectifiers.
KW - Diamond
KW - Schottky barrier diode
KW - Schottky barrier height
KW - lanthanum hexaboride
UR - https://www.scopus.com/pages/publications/85112654395
U2 - 10.1109/LED.2021.3099507
DO - 10.1109/LED.2021.3099507
M3 - 文章
AN - SCOPUS:85112654395
SN - 0741-3106
VL - 42
SP - 1366
EP - 1369
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 9
ER -