Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches

S. L. Wu; Y. W. Liu; X. N. Zhang; C. Yang; L. G. Liu; Y. G. Wang; G. Niu

doi:10.1149/09001.0129ecst

Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches

S. L. Wu
, Y. W. Liu
, X. N. Zhang
, C. Yang
, L. G. Liu
, Y. G. Wang
, G. Niu

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High-k material based Solid state incandescent light emitting devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light-emission devices. The light emission mechanism of this device is related to the thermal excitation of Si-diffusion assisted conductive filaments (CFs). In this work, we demonstrate an approach to improve the performance of HfO2 based SSI-LED devices, which uses a patterned wafer to enhance the electrical field locally and thus helps to form more CFs. Moreover, the distribution of the lighting dots can be regulated by the structure patterned on substrate with a special size and shape. Our results open an effective way to feasibly control the layout of lighting dots and optimize the performance of SSI-LEDs.

Original language	English
Title of host publication	2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
Editors	Yue Kuo
Publisher	Electrochemical Society Inc.
Pages	129-134
Number of pages	6
Edition	1
ISBN (Electronic)	9781607688730, 9781607688730
DOIs	https://doi.org/10.1149/09001.0129ecst
State	Published - 2019
Event	7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 - Kyoto, Japan Duration: 19 May 2019 → 23 May 2019

Publication series

Name	ECS Transactions
Number	1
Volume	90
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
Country/Territory	Japan
City	Kyoto
Period	19/05/19 → 23/05/19

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10.1149/09001.0129ecst

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Wu, S. L., Liu, Y. W., Zhang, X. N., Yang, C., Liu, L. G., Wang, Y. G., & Niu, G. (2019). Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches. In Y. Kuo (Ed.), 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 (1 ed., pp. 129-134). (ECS Transactions; Vol. 90, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/09001.0129ecst

Wu, S. L. ; Liu, Y. W. ; Zhang, X. N. et al. / Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches. 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019. editor / Yue Kuo. 1. ed. Electrochemical Society Inc., 2019. pp. 129-134 (ECS Transactions; 1).

@inproceedings{f7e3c57ed03f4dfcaf11466d042bf781,

title = "Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches",

abstract = "High-k material based Solid state incandescent light emitting devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light-emission devices. The light emission mechanism of this device is related to the thermal excitation of Si-diffusion assisted conductive filaments (CFs). In this work, we demonstrate an approach to improve the performance of HfO2 based SSI-LED devices, which uses a patterned wafer to enhance the electrical field locally and thus helps to form more CFs. Moreover, the distribution of the lighting dots can be regulated by the structure patterned on substrate with a special size and shape. Our results open an effective way to feasibly control the layout of lighting dots and optimize the performance of SSI-LEDs.",

author = "Wu, \{S. L.\} and Liu, \{Y. W.\} and Zhang, \{X. N.\} and C. Yang and Liu, \{L. G.\} and Wang, \{Y. G.\} and G. Niu",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 ; Conference date: 19-05-2019 Through 23-05-2019",

year = "2019",

doi = "10.1149/09001.0129ecst",

language = "英语",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "129--134",

editor = "Yue Kuo",

booktitle = "2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019",

edition = "1",

}

Wu, SL, Liu, YW, Zhang, XN, Yang, C, Liu, LG, Wang, YG & Niu, G 2019, Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches. in Y Kuo (ed.), 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019. 1 edn, ECS Transactions, no. 1, vol. 90, Electrochemical Society Inc., pp. 129-134, 7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019, Kyoto, Japan, 19/05/19. https://doi.org/10.1149/09001.0129ecst

Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches. / Wu, S. L.; Liu, Y. W.; Zhang, X. N. et al.
2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019. ed. / Yue Kuo. 1. ed. Electrochemical Society Inc., 2019. p. 129-134 (ECS Transactions; Vol. 90, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches

AU - Wu, S. L.

AU - Liu, Y. W.

AU - Zhang, X. N.

AU - Yang, C.

AU - Liu, L. G.

AU - Wang, Y. G.

AU - Niu, G.

PY - 2019

Y1 - 2019

N2 - High-k material based Solid state incandescent light emitting devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light-emission devices. The light emission mechanism of this device is related to the thermal excitation of Si-diffusion assisted conductive filaments (CFs). In this work, we demonstrate an approach to improve the performance of HfO2 based SSI-LED devices, which uses a patterned wafer to enhance the electrical field locally and thus helps to form more CFs. Moreover, the distribution of the lighting dots can be regulated by the structure patterned on substrate with a special size and shape. Our results open an effective way to feasibly control the layout of lighting dots and optimize the performance of SSI-LEDs.

AB - High-k material based Solid state incandescent light emitting devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light-emission devices. The light emission mechanism of this device is related to the thermal excitation of Si-diffusion assisted conductive filaments (CFs). In this work, we demonstrate an approach to improve the performance of HfO2 based SSI-LED devices, which uses a patterned wafer to enhance the electrical field locally and thus helps to form more CFs. Moreover, the distribution of the lighting dots can be regulated by the structure patterned on substrate with a special size and shape. Our results open an effective way to feasibly control the layout of lighting dots and optimize the performance of SSI-LEDs.

UR - https://www.scopus.com/pages/publications/85070067342

U2 - 10.1149/09001.0129ecst

DO - 10.1149/09001.0129ecst

M3 - 会议稿件

AN - SCOPUS:85070067342

T3 - ECS Transactions

SP - 129

EP - 134

BT - 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019

A2 - Kuo, Yue

PB - Electrochemical Society Inc.

T2 - 7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019

Y2 - 19 May 2019 through 23 May 2019

ER -

Wu SL, Liu YW, Zhang XN, Yang C, Liu LG, Wang YG et al. Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches. In Kuo Y, editor, 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019. 1 ed. Electrochemical Society Inc. 2019. p. 129-134. (ECS Transactions; 1). doi: 10.1149/09001.0129ecst

Performance enhancement of solid state light emission device and geometrically confinement of lighting dots by using patterned wafer approaches

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