Parasitic resistance elimination for the flexibly thin film grid pressure sensor

Gaofeng Zhou; Yulong Zhao; Zhuangde Jiang

doi:10.1109/ICSENST.2008.4757168

Parasitic resistance elimination for the flexibly thin film grid pressure sensor

Gaofeng Zhou
, Yulong Zhao
, Zhuangde Jiang

School of Mechanical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The original structure of the flexibly thin film grid pressure sensor often suffers from the parasitic resistance of itself structure. In order to eliminate the parasitic resistance, the new "interlayer" structure of this sensor with good performance indexes was brought forward and given out after defects of original structure were analyzed and pointed out. The detecting principle and fabricating procedures of new structure were narrated minutely in this paper. The corresponding experiment was done, based on the test device. The experimenting results showed that the new "interlayer" structure with good performance indexes could measure out interface pressure distribution between touching objects and further eliminate the parasitic resistance.

Original language	English
Title of host publication	Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008
Pages	557-562
Number of pages	6
DOIs	https://doi.org/10.1109/ICSENST.2008.4757168
State	Published - 2008
Event	3rd International Conference on Sensing Technology, ICST 2008 - Tainan, Taiwan, Province of China Duration: 30 Nov 2008 → 3 Dec 2008

Publication series

Name	Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008

Conference

Conference	3rd International Conference on Sensing Technology, ICST 2008
Country/Territory	Taiwan, Province of China
City	Tainan
Period	30/11/08 → 3/12/08

Keywords

Piezoresistive principle
Silver electrodes
The "interlayer" structure
The flexibly thin film grid pressure sensor

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10.1109/ICSENST.2008.4757168

Cite this

@inproceedings{809c8005ce284d15864214bdf5591841,

title = "Parasitic resistance elimination for the flexibly thin film grid pressure sensor",

abstract = "The original structure of the flexibly thin film grid pressure sensor often suffers from the parasitic resistance of itself structure. In order to eliminate the parasitic resistance, the new {"}interlayer{"} structure of this sensor with good performance indexes was brought forward and given out after defects of original structure were analyzed and pointed out. The detecting principle and fabricating procedures of new structure were narrated minutely in this paper. The corresponding experiment was done, based on the test device. The experimenting results showed that the new {"}interlayer{"} structure with good performance indexes could measure out interface pressure distribution between touching objects and further eliminate the parasitic resistance.",

keywords = "Piezoresistive principle, Silver electrodes, The {"}interlayer{"} structure, The flexibly thin film grid pressure sensor",

author = "Gaofeng Zhou and Yulong Zhao and Zhuangde Jiang",

year = "2008",

doi = "10.1109/ICSENST.2008.4757168",

language = "英语",

isbn = "9781424421770",

series = "Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008",

pages = "557--562",

booktitle = "Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008",

note = "3rd International Conference on Sensing Technology, ICST 2008 ; Conference date: 30-11-2008 Through 03-12-2008",

}

Zhou, G, Zhao, Y & Jiang, Z 2008, Parasitic resistance elimination for the flexibly thin film grid pressure sensor. in Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008., 4757168, Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008, pp. 557-562, 3rd International Conference on Sensing Technology, ICST 2008, Tainan, Taiwan, Province of China, 30/11/08. https://doi.org/10.1109/ICSENST.2008.4757168

Parasitic resistance elimination for the flexibly thin film grid pressure sensor. / Zhou, Gaofeng; Zhao, Yulong ; Jiang, Zhuangde.
Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008. 2008. p. 557-562 4757168 (Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Parasitic resistance elimination for the flexibly thin film grid pressure sensor

AU - Zhou, Gaofeng

AU - Zhao, Yulong

AU - Jiang, Zhuangde

PY - 2008

Y1 - 2008

N2 - The original structure of the flexibly thin film grid pressure sensor often suffers from the parasitic resistance of itself structure. In order to eliminate the parasitic resistance, the new "interlayer" structure of this sensor with good performance indexes was brought forward and given out after defects of original structure were analyzed and pointed out. The detecting principle and fabricating procedures of new structure were narrated minutely in this paper. The corresponding experiment was done, based on the test device. The experimenting results showed that the new "interlayer" structure with good performance indexes could measure out interface pressure distribution between touching objects and further eliminate the parasitic resistance.

AB - The original structure of the flexibly thin film grid pressure sensor often suffers from the parasitic resistance of itself structure. In order to eliminate the parasitic resistance, the new "interlayer" structure of this sensor with good performance indexes was brought forward and given out after defects of original structure were analyzed and pointed out. The detecting principle and fabricating procedures of new structure were narrated minutely in this paper. The corresponding experiment was done, based on the test device. The experimenting results showed that the new "interlayer" structure with good performance indexes could measure out interface pressure distribution between touching objects and further eliminate the parasitic resistance.

KW - Piezoresistive principle

KW - Silver electrodes

KW - The "interlayer" structure

KW - The flexibly thin film grid pressure sensor

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DO - 10.1109/ICSENST.2008.4757168

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T3 - Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008

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BT - Proceedings of the 3rd International Conference on Sensing Technology, ICST 2008

T2 - 3rd International Conference on Sensing Technology, ICST 2008

Y2 - 30 November 2008 through 3 December 2008

ER -

Parasitic resistance elimination for the flexibly thin film grid pressure sensor

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Conference

Keywords

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