Optimal design of transparency of anode emitter in gate commutate thyristor

Numerical simulations have been employed to investigate the effect of the material parameters of the buffer layer and transparent emitter on the transparency of the transparent emitter of gate commutate thyristor. The results show that the transparent emitter is a p-n junction with the transparency depending on the current density. The transparency is low at lower current density while it drastically increases with the current density. With the doping level increasing of the buffer layer or decreasing of the transparent emitter under the condition that keeping other parameters constant, the transparency increases. And the transparency becomes larger when the junction depth of transparent emitter width decreases. Based on the simulation results, the transparency can be controlled and adjusted to the desired level by varying the material parameters of the buffer layer and transparent emitter properly.