Optically Controlled MoS₂Phase Conversion Memory-Based In-Sensor Computing Enables Higher Information Security

Data security has been playing an increasingly crucial role in diverse fields, such as industry, commerce, agriculture, and military defense. Conventional encryption technology involves complex circuits and designs of the algorithm. We propose a hybrid architecture enabled by two-terminal MoS₂ optoelectronic memory for image encryption, yielding a successful attack rate (SAR) of 0.0% and a system link indicator D_↔^sys = 0.32. This merit is attributed to the light-dosage-induced phase change generation (H_yMoS_x) in MoS₂ optoelectronic memory. Through precise control of the concentration of the H_yMoS_x ratio, the two-terminal optoelectronic memory can provide 128 short-term states and 256 long-term states to execute reservoir encoding and pixel compression, efficiently reducing the postencryption data stream and increasing data safety. This route provides a significant advantage in security, efficiency, and adaptability for data encryption in future information security.