Optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering

Jin Liang Yan; Yi Jun Zhang; Qing Shan Li; Chong Qu; Li Ying Zhang; Ting Li

doi:10.3788/gzxb20114006.0852

Optical properties of N-doped β-Ga₂O₃ films deposited by RF magnetron sputtering

Jin Liang Yan
, Yi Jun Zhang
, Qing Shan Li
, Chong Qu
, Li Ying Zhang
, Ting Li

Ludong University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The N-doped β-Ga₂O₃ films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga₂O₃ films were significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands were observed and discussed.

Original language	English
Pages (from-to)	852-856
Number of pages	5
Journal	Guangzi Xuebao/Acta Photonica Sinica
Volume	40
Issue number	6
DOIs	https://doi.org/10.3788/gzxb20114006.0852
State	Published - Jun 2011
Externally published	Yes

Keywords

N-doped β-GaO
Optical band gap
Post-annealed
RF magnetron sputtering
Transparent conductive oxide

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10.3788/gzxb20114006.0852

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@article{14055f3d3d964dc39ebe052498a85f2f,

title = "Optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering",

abstract = "The N-doped β-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0\% to 30\%). The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films were significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands were observed and discussed.",

keywords = "N-doped β-GaO, Optical band gap, Post-annealed, RF magnetron sputtering, Transparent conductive oxide",

author = "Yan, \{Jin Liang\} and Zhang, \{Yi Jun\} and Li, \{Qing Shan\} and Chong Qu and Zhang, \{Li Ying\} and Ting Li",

year = "2011",

month = jun,

doi = "10.3788/gzxb20114006.0852",

language = "英语",

volume = "40",

pages = "852--856",

journal = "Guangzi Xuebao/Acta Photonica Sinica",

issn = "1004-4213",

publisher = "Chinese Optical Society",

number = "6",

}

TY - JOUR

T1 - Optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering

AU - Yan, Jin Liang

AU - Zhang, Yi Jun

AU - Li, Qing Shan

AU - Qu, Chong

AU - Zhang, Li Ying

AU - Li, Ting

PY - 2011/6

Y1 - 2011/6

N2 - The N-doped β-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films were significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands were observed and discussed.

AB - The N-doped β-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films were significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands were observed and discussed.

KW - N-doped β-GaO

KW - Optical band gap

KW - Post-annealed

KW - RF magnetron sputtering

KW - Transparent conductive oxide

UR - https://www.scopus.com/pages/publications/79960650852

U2 - 10.3788/gzxb20114006.0852

DO - 10.3788/gzxb20114006.0852

M3 - 文章

AN - SCOPUS:79960650852

SN - 1004-4213

VL - 40

SP - 852

EP - 856

JO - Guangzi Xuebao/Acta Photonica Sinica

JF - Guangzi Xuebao/Acta Photonica Sinica

IS - 6

ER -

Optical properties of N-doped β-Ga₂O₃ films deposited by RF magnetron sputtering

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Keywords

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