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On electron loss lowering at hematite photoelectrode interfaces

  • Karen C. Bedin
  • , Ingrid Rodríguez-Gutiérrez
  • , Lizandra R.P. Peregrino
  • , Lionel Vayssieres
  • , Flavio L. Souza
  • Centro Nacional de Pesquisa em Energia e Materiais
  • Universidade Federal do ABC
  • Universidade Estadual de Campinas

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Photoelectrodes nanoscale interface design has become a key factor to enhancing their photoelectrochemical performance for water splitting by reducing the photogenerated charge recombination, thus ensuring their efficient separation, transport, and collection. In this work, hematite (α-Fe2O3) photoanodes were prepared from a simple and scalable methodology capable of synergistically mitigating the charge loss and recombination at all interfaces (i.e., fluorine-doped tin oxide/hematite, hematite/hematite, and hematite/electrolyte) and achieving overall efficiency of ∼50% for the water oxidation reaction compared to pristine photoelectrodes. The external quantum efficiency at 1.23 V versus reversible hydrogen electrode of pristine hematite was enhanced 6.7 times with the modifications of the three interfaces (Al2O3/NbH/NiFeOx). Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopies were applied to probe and monitor the photogenerated charge carrier dynamics revealing a substantial improvement in charge separation and collection at the back-contact interface as well as a partial mitigation of the surface states at the hematite–electrolyte interface.

Original languageEnglish
Pages (from-to)79-92
Number of pages14
JournalJournal of the American Ceramic Society
Volume106
Issue number1
DOIs
StatePublished - Jan 2023

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • energy conversion
  • hematite
  • interfaces
  • surface modification
  • thin films

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