Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Antonio Di Bartolomeo; Maurizio Passacantando; Gang Niu; Viktoria Schlykow; Grzegorz Lupina; Filippo Giubileo; Thomas Schroeder

doi:10.1088/0957-4484/27/48/485707

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Antonio Di Bartolomeo
, Maurizio Passacantando
, Gang Niu
, Viktoria Schlykow
, Grzegorz Lupina
, Filippo Giubileo
, Thomas Schroeder

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of 65 V μm^-1 and field enhancement factor β ∼ 100 at anode-cathode distance of ∼0.6 μm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.

Original language	English
Article number	485707
Journal	Nanotechnology
Volume	27
Issue number	48
DOIs	https://doi.org/10.1088/0957-4484/27/48/485707
State	Published - 2 Nov 2016

Keywords

epitaxy
field emission
germanium
heterojunction
nanoparticle
rectification
segregation

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10.1088/0957-4484/27/48/485707

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title = "Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays",

abstract = "We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of 65 V μm-1 and field enhancement factor β ∼ 100 at anode-cathode distance of ∼0.6 μm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.",

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author = "\{Di Bartolomeo\}, Antonio and Maurizio Passacantando and Gang Niu and Viktoria Schlykow and Grzegorz Lupina and Filippo Giubileo and Thomas Schroeder",

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T1 - Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

AU - Di Bartolomeo, Antonio

AU - Passacantando, Maurizio

AU - Niu, Gang

AU - Schlykow, Viktoria

AU - Lupina, Grzegorz

AU - Giubileo, Filippo

AU - Schroeder, Thomas

PY - 2016/11/2

Y1 - 2016/11/2

N2 - We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of 65 V μm-1 and field enhancement factor β ∼ 100 at anode-cathode distance of ∼0.6 μm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.

AB - We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of 65 V μm-1 and field enhancement factor β ∼ 100 at anode-cathode distance of ∼0.6 μm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.

KW - epitaxy

KW - field emission

KW - germanium

KW - heterojunction

KW - nanoparticle

KW - rectification

KW - segregation

UR - https://www.scopus.com/pages/publications/84994891164

U2 - 10.1088/0957-4484/27/48/485707

DO - 10.1088/0957-4484/27/48/485707

M3 - 文章

AN - SCOPUS:84994891164

SN - 0957-4484

VL - 27

JO - Nanotechnology

JF - Nanotechnology

IS - 48

M1 - 485707

ER -

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Abstract

Keywords

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