Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Jun Da Yan; Quan Wang; Xiao Liang Wang; Hong Ling Xiao; Li Juan Jiang; Hai Bo Yin; Chun Feng; Cui Mei Wang; Shen Qi Qu; Jia Min Gong; Bo Zhang; Bai Quan Li; Zhan Guo Wang; Xun Hou

doi:10.1088/0256-307X/32/12/127301

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Jun Da Yan
, Quan Wang
, Xiao Liang Wang
, Hong Ling Xiao
, Li Juan Jiang
, Hai Bo Yin
, Chun Feng
, Cui Mei Wang
, Shen Qi Qu
, Jia Min Gong
, Bo Zhang
, Bai Quan Li
, Zhan Guo Wang
, Xun Hou

Research output: Contribution to journal › Article › peer-review

Abstract

Direct-current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (I_DS = 32.0mA/mm) for V_GS swept from +0.7V to -0.6V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when I_DS-V_GSscans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.

Original language	English
Article number	127301
Journal	Chinese Physics Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1088/0256-307X/32/12/127301
State	Published - 1 Dec 2015
Externally published	Yes

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10.1088/0256-307X/32/12/127301

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Yan, J. D., Wang, Q., Wang, X. L., Xiao, H. L., Jiang, L. J., Yin, H. B., Feng, C., Wang, C. M., Qu, S. Q., Gong, J. M., Zhang, B., Li, B. Q., Wang, Z. G., & Hou, X. (2015). Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors. Chinese Physics Letters, 32(12), Article 127301. https://doi.org/10.1088/0256-307X/32/12/127301

@article{a72873da51da4c3a94bb21d06cdf98b5,

title = "Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors",

abstract = "Direct-current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS = 32.0mA/mm) for VGS swept from +0.7V to -0.6V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS-VGSscans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.",

author = "Yan, \{Jun Da\} and Quan Wang and Wang, \{Xiao Liang\} and Xiao, \{Hong Ling\} and Jiang, \{Li Juan\} and Yin, \{Hai Bo\} and Chun Feng and Wang, \{Cui Mei\} and Qu, \{Shen Qi\} and Gong, \{Jia Min\} and Bo Zhang and Li, \{Bai Quan\} and Wang, \{Zhan Guo\} and Xun Hou",

note = "Publisher Copyright: {\textcopyright} 2015 Chinese Physical Society and IOP Publishing Ltd.",

year = "2015",

month = dec,

day = "1",

doi = "10.1088/0256-307X/32/12/127301",

language = "英语",

volume = "32",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "12",

}

TY - JOUR

T1 - Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

AU - Yan, Jun Da

AU - Wang, Quan

AU - Wang, Xiao Liang

AU - Xiao, Hong Ling

AU - Jiang, Li Juan

AU - Yin, Hai Bo

AU - Feng, Chun

AU - Wang, Cui Mei

AU - Qu, Shen Qi

AU - Gong, Jia Min

AU - Zhang, Bo

AU - Li, Bai Quan

AU - Wang, Zhan Guo

AU - Hou, Xun

PY - 2015/12/1

Y1 - 2015/12/1

N2 - Direct-current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS = 32.0mA/mm) for VGS swept from +0.7V to -0.6V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS-VGSscans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.

AB - Direct-current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS = 32.0mA/mm) for VGS swept from +0.7V to -0.6V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS-VGSscans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.

UR - https://www.scopus.com/pages/publications/84949551094

U2 - 10.1088/0256-307X/32/12/127301

DO - 10.1088/0256-307X/32/12/127301

M3 - 文章

AN - SCOPUS:84949551094

SN - 0256-307X

VL - 32

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 12

M1 - 127301

ER -

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

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