Numerical simulation of the growth characteristics of laser chemical vapor deposition of silicon carbide

A thermal model, which involves heat transfer in substrate and gases, mass transfer in gases, and chemical reaction on the top surface of the substrate, is set up to simulate the Laser Chemical Vapor Deposition (LCVD) process of Silicon Carbide (SiC) by a finite volume method. Methyltrichlorosilane (MTS; SiCl₃CH₃) and hydrogen (H₂) are chosen as precursor and carrier gas, respectively. A designed set of model cases is executed for both stationary and moving laser beams. For the cases of stationary laser beam, the shape of the SiC deposits is higher and wider with increasing laser power. For the cases of moving laser beam, a narrow strip of SiC deposits is formed along the laser scanning path. Due to the low sticking coefficient of SiC deposits at high temperature, the volcano-like defects occur on the top center of the SiC deposits for both stationary and moving laser beams.