Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel

Wenjie Chen; Xiaomei Song; Hao Huang; Xu Yang

doi:10.1109/IPEC.2014.6870105

Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel

Wenjie Chen
, Xiaomei Song
, Hao Huang
, Xu Yang

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

The occurrence of leakage current (also called ground current) that can occur in photovoltaic (PV) system depends strongly on the value of parasitic capacitance between PV cell and its metal frame, usually earth connected. This paper presents a straightforward approach to calculate the involved panel parasitic capacitance in order to predict the likeliness of such leakage current. A novel 2-D parasitic edge capacitance model is developed to accurately calculate the grounding capacitance of PV panel. Experimental results are obtained on five different PV panels of mono-crystalline, polycrystalline and thin-film type with rated power 10W, 50W and 175W. It is demonstrated that the proposed approach combines easy of applications and satisfying accurateness.

Original language	English
Title of host publication	2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Publisher	IEEE Computer Society
Pages	2967-2971
Number of pages	5
ISBN (Print)	9781479927050
DOIs	https://doi.org/10.1109/IPEC.2014.6870105
State	Published - 2014
Event	7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan Duration: 18 May 2014 → 21 May 2014

Publication series

Name	2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Conference

Conference	7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Country/Territory	Japan
City	Hiroshima
Period	18/05/14 → 21/05/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/IPEC.2014.6870105

Cite this

Chen, W., Song, X., Huang, H., & Yang, X. (2014). Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 (pp. 2967-2971). Article 6870105 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). IEEE Computer Society. https://doi.org/10.1109/IPEC.2014.6870105

@inproceedings{45175cd64f2940cb88a3d08018ee110f,

title = "Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel",

abstract = "The occurrence of leakage current (also called ground current) that can occur in photovoltaic (PV) system depends strongly on the value of parasitic capacitance between PV cell and its metal frame, usually earth connected. This paper presents a straightforward approach to calculate the involved panel parasitic capacitance in order to predict the likeliness of such leakage current. A novel 2-D parasitic edge capacitance model is developed to accurately calculate the grounding capacitance of PV panel. Experimental results are obtained on five different PV panels of mono-crystalline, polycrystalline and thin-film type with rated power 10W, 50W and 175W. It is demonstrated that the proposed approach combines easy of applications and satisfying accurateness.",

author = "Wenjie Chen and Xiaomei Song and Hao Huang and Xu Yang",

year = "2014",

doi = "10.1109/IPEC.2014.6870105",

language = "英语",

isbn = "9781479927050",

series = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",

publisher = "IEEE Computer Society",

pages = "2967--2971",

booktitle = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",

note = "7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 ; Conference date: 18-05-2014 Through 21-05-2014",

}

Chen, W, Song, X, Huang, H & Yang, X 2014, Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel. in 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014., 6870105, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE Computer Society, pp. 2967-2971, 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 18/05/14. https://doi.org/10.1109/IPEC.2014.6870105

Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel. / Chen, Wenjie; Song, Xiaomei; Huang, Hao et al.
2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. p. 2967-2971 6870105 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel

AU - Chen, Wenjie

AU - Song, Xiaomei

AU - Huang, Hao

AU - Yang, Xu

PY - 2014

Y1 - 2014

N2 - The occurrence of leakage current (also called ground current) that can occur in photovoltaic (PV) system depends strongly on the value of parasitic capacitance between PV cell and its metal frame, usually earth connected. This paper presents a straightforward approach to calculate the involved panel parasitic capacitance in order to predict the likeliness of such leakage current. A novel 2-D parasitic edge capacitance model is developed to accurately calculate the grounding capacitance of PV panel. Experimental results are obtained on five different PV panels of mono-crystalline, polycrystalline and thin-film type with rated power 10W, 50W and 175W. It is demonstrated that the proposed approach combines easy of applications and satisfying accurateness.

AB - The occurrence of leakage current (also called ground current) that can occur in photovoltaic (PV) system depends strongly on the value of parasitic capacitance between PV cell and its metal frame, usually earth connected. This paper presents a straightforward approach to calculate the involved panel parasitic capacitance in order to predict the likeliness of such leakage current. A novel 2-D parasitic edge capacitance model is developed to accurately calculate the grounding capacitance of PV panel. Experimental results are obtained on five different PV panels of mono-crystalline, polycrystalline and thin-film type with rated power 10W, 50W and 175W. It is demonstrated that the proposed approach combines easy of applications and satisfying accurateness.

UR - https://www.scopus.com/pages/publications/84906708749

U2 - 10.1109/IPEC.2014.6870105

DO - 10.1109/IPEC.2014.6870105

M3 - 会议稿件

AN - SCOPUS:84906708749

SN - 9781479927050

T3 - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

SP - 2967

EP - 2971

BT - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

PB - IEEE Computer Society

T2 - 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Y2 - 18 May 2014 through 21 May 2014

ER -

Chen W, Song X, Huang H, Yang X. Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society. 2014. p. 2967-2971. 6870105. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). doi: 10.1109/IPEC.2014.6870105

Numerical and experimental investigation of parasitic edge capacitance for photovoltaic panel

Abstract

Publication series

Conference

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this