Novel B-site scheelite structure ceramic Bi(Ge_0.5Mo_0.5)O₄ and its dielectric properties

Scheelite structure phase inorganic oxides show their irreplaceable role in numerous application areas due to their clear structure and superior properties, especially in dielectrics. Scheelite structure phase BiVO₄ has been permanently studied but substitutions, modifications, and explorations of novel phases persist hitherto and inspire more interest. In this work, we report a novel Scheelite structure phase of Bi(Ge_0.5Mo_0.5)O₄ and a detailed study of both structural analysis and dielectric properties investigation. Bi(Ge_0.5Mo_0.5)O₄ adopts the monoclinic Scheelite structure, identical to BiVO₄, with a dielectric permittivity of ∼ 35, Qf value of ∼20 000 GHz, and TCF value of ‒46 ppm/°C. No secondary ferroelastic transition was seen in Bi(Ge_0.5Mo_0.5)O₄ till 600°C, close to its synthetical temperature. The results indicate the success of discovering a new Scheelite structure phase and its prior engineering potential in modifying and substituting BiVO₄ over the dielectric area, photocatalyst, ion conductor, and so forth.